SI5857DU-T1-GE3 Vishay, SI5857DU-T1-GE3 Datasheet
SI5857DU-T1-GE3
Specifications of SI5857DU-T1-GE3
Related parts for SI5857DU-T1-GE3
SI5857DU-T1-GE3 Summary of contents
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... Bottom View Ordering Information: Si5857DU-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T = 150 °C) (MOSFET) J Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) Average Forward Current (Schottky) ...
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... Si5857DU Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET) Maximum Junction-to-Case (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky) Maximum Junction-to-Case (Drain) (Schottky) Notes: a. Package limited. b. Surface Mounted on FR4 board ≤ See Solder Profile (www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated result of the singulation process in manufacturing ...
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... Symbol Test Conditions ° dI/dt = 100 A/µ ° °C, unless otherwise noted J Symbol Test Conditions 125 ° ° 125 ° Si5857DU Vishay Siliconix Min. Typ. Max. Unit - 0 Min. Typ. Max. Unit 0.34 0.375 V 0.255 0.290 0.05 0.500 100 90 pF www.vishay.com 3 ...
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... Si5857DU Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 0.0 0.5 1.0 1 Drain-to-Source Voltage (V) DS Output Characteristics 0. 2.5 V 0.16 GS 0.12 0.08 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 5 Total Gate Charge (nC) g Gate Charge www.vishay.com 2.0 2.5 3 ...
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... DS(on) I limited 10 D(on °C A BVDSS limited Single Pulse 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Case Si5857DU Vishay Siliconix 125 ° °C A 2.0 2.5 3.0 3.5 4 Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 5 0 0.001 0.01 0.1 1 ...
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... Si5857DU Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Package Limited Case Temperature ( C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Duty Cycle = 0.5 0.2 0.05 0.1 0.02 0. Document Number: 73696 S09-2111-Rev. D, 12-Oct- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Single Pulse - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si5857DU Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA ( ...
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... Si5857DU Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.1 0. 0.001 0.0001 - Junction Temperature (°C) J Reverse Current vs. Junction Temperature www.vishay.com 8 75 100 125 150 600 500 400 300 200 100 Reverse Voltage (V) KA Capacitance 150 ° ° 0.1 0 0.1 ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73696. Document Number: 73696 S09-2111-Rev. D, 12-Oct- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -2 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si5857DU Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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