SI5857DU-T1-E3 Vishay, SI5857DU-T1-E3 Datasheet

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... Marking Code Bottom View Ordering Information: Si5857DU-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T = 150 °C) (MOSFET) J Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) Average Forward Current (Schottky) ...

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... Si5857DU Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET) Maximum Junction-to-Case (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky) Maximum Junction-to-Case (Drain) (Schottky) Notes: a. Package limited. b. Surface Mounted on FR4 Board ≤ 5 sec. d. See Solder Profile (http://www.vishay.com/doc?73257). posed copper (not plated result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection ...

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... S-62480-Rev. B, 04-Dec-06 Symbol Test Conditions ° di/dt = 100 A/µ °C, unless otherwise noted J Symbol Test Conditions 125 ° ° 125 ° Si5857DU Vishay Siliconix Min Typ Max - 0 ° Min Typ Max 0.34 0.375 0.255 0.290 0.05 0.500 100 90 www.vishay.com Unit Unit ...

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... Si5857DU Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 0.0 0.5 1.0 1 Drain-to-Source Voltage (V) DS Output Characteristics 0. 2.5 V 0.16 GS 0.12 0.08 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 5 Total Gate Charge (nC) g Gate Charge www.vishay.com 2.0 2.5 3 ...

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... DS(on) I limited 10 D(on °C A BVDSS limited Single Pulse 0.01 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area, Junction-to-Case Si5857DU Vishay Siliconix 125 ° °C A 2.0 2.5 3.0 3.5 4 Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 5 0 0.001 0.01 0.1 1 ...

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... Si5857DU Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Package Limited Case Temperature ( C Current Derating* *The power dissipation P is based J(max) pation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit. ...

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... Document Number: 73696 S-62480-Rev. B, 04-Dec- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Single Pulse - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Si5857DU Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA ( ...

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... Si5857DU Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.1 0. 0.001 0.0001 - Junction Temperature (°C) J Reverse Current vs. Junction Temperature www.vishay.com 8 75 100 125 150 600 500 400 300 200 100 Reverse Voltage (V) KA Capacitance 150 ° ° 0.1 0 0.1 ...

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... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73696. Document Number: 73696 S-62480-Rev. B, 04-Dec- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient -2 10 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Si5857DU Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...

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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...