SI5857DU-T1-E3 Vishay, SI5857DU-T1-E3 Datasheet - Page 8

• Manufacturer Part Number: SI5857DU-T1-E3
• Description: MOSFET P-CH 20V 6A PPAK CHIPFET
• Manufacturer: Vishay

Specifications of SI5857DU-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 480pF @ 10V
• Power - Max: 10.4W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFet Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5857DU-T1-E3TR

Si5857DU
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.0001
0.001
0.01
100
0.1
10
1
- 50
Reverse Current vs. Junction Temperature
- 25
T
0
J
20 V
- Junction Temperature (°C)
25
10 V
50
75
100
600
500
400
300
200
100
0
0
125
150
4
V
KA
Capacitance
- Reverse Voltage (V)
8
12
0.1
10
1
0
16
0.1
V
20
F
Forward Voltage Drop
T
- Forward Voltage Drop (V)
J
0.2
= 150 °C
S-62480-Rev. B, 04-Dec-06
0.3
Document Number: 73696
0.4
T
J
= 25 °C
0.5
0.6