SI5857DU-T1-E3 Vishay, SI5857DU-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI5857DU-T1-E3
• Description: MOSFET P-CH 20V 6A PPAK CHIPFET
• Manufacturer: Vishay

Specifications of SI5857DU-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 480pF @ 10V
• Power - Max: 10.4W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFet Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5857DU-T1-E3TR

Si5857DU
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
*The power dissipation P
pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
www.vishay.com
6
12
10
8
6
4
2
0
0
25
Package Limited
D
is based on T
T
C
Current Derating*
50
- Case Temperature (
75
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi-
100
°C
)
125
150
12
10
8
6
4
2
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
S-62480-Rev. B, 04-Dec-06
Document Number: 73696
100
125
150