SI5857DU-T1-E3 Vishay, SI5857DU-T1-E3 Datasheet - Page 7

• Manufacturer Part Number: SI5857DU-T1-E3
• Description: MOSFET P-CH 20V 6A PPAK CHIPFET
• Manufacturer: Vishay

Specifications of SI5857DU-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 480pF @ 10V
• Power - Max: 10.4W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFet Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5857DU-T1-E3TR

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73696
S-62480-Rev. B, 04-Dec-06
0.01
0.01
0.1
1
1
10
10
-4
0.02
-4
0.05
0.2
0.1
Duty Cycle = 0.5
0.1
0.2
Duty Cycle = 0.5
Single Pulse
0.05
10
-3
0.02
Normalized Thermal Transient Impedance, Junction-to-Ambient
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
-1
10
-2
1
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
10
DM
JM
-1
- T
t
A
1
= P
Vishay Siliconix
t
2
DM
Z
thJA
Si5857DU
100
thJA
t
t
1
2
(t)
= 87 °C/W
www.vishay.com
1
0
0
1
0
7