SI5857DU-T1-E3 Vishay, SI5857DU-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI5857DU-T1-E3
• Description: MOSFET P-CH 20V 6A PPAK CHIPFET
• Manufacturer: Vishay

Specifications of SI5857DU-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 480pF @ 10V
• Power - Max: 10.4W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFet Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5857DU-T1-E3TR

Si5857DU
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.20
0.16
0.12
0.08
0.04
20
16
12
10
On-Resistance vs. Drain Current and Gate Voltage
8
4
0
8
6
4
2
0
0.0
0
0
V
V
GS
GS
I
D
= 5 V
= 4.5 V
0.5
= 5.1 A
2
V
V
4
GS
DS
Q
Output Characteristics
= 2.5 V
g
- Drain-to-Source Voltage (V)
1.0
I
- Total Gate Charge (nC)
D
4
Gate Charge
- Drain Current (A)
V
8
DS
= 10 V
1.5
V
6
GS
= 4 V
V
12
DS
2.0
8
= 16 V
V
GS
V
V
V
V
V
GS
GS
GS
GS
= 3.5 V
GS
16
2.5
= 4.5 V
10
= 2 V
= 2.5 V
= 1.5 V
= 3 V
3.0
12
20
800
700
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
V
I
D
GS
- 25
2
= 3.6 A
= 4.5 V,
V
V
4
DS
T
GS
0.5
Transfer Characteristics
J
0
- Junction Temperature (°C)
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
rss
6
25
Capacitance
T
C
8
T
C
= 25 °C
= 125 °C
1.0
C
50
C
10
S-62480-Rev. B, 04-Dec-06
oss
iss
Document Number: 73696
12
75
14
100
1.5
T
C
16
= - 55 °C
125
18
150
2.0
20