SI5857DU-T1-E3 Vishay, SI5857DU-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI5857DU-T1-E3
• Description: MOSFET P-CH 20V 6A PPAK CHIPFET
• Manufacturer: Vishay

Specifications of SI5857DU-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 480pF @ 10V
• Power - Max: 10.4W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFet Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5857DU-T1-E3TR

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73696
S-62480-Rev. B, 04-Dec-06
1.3
1.2
1.1
1.0
0.9
0.8
0.7
10
20
0.0
1
- 50
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
- Source-to-Drain Voltage (V)
T
J
T
0.4
Threshold Voltage
J
= 150 °C
- Temperature (°C)
25
0.6
50
75
0.8
I
0.01
D
100
0.1
T
10
= 250 µA
100
J
1
0.1
= 25 °C
1.0
I
*V
D(on)
*Limited by r
Safe Operating Area, Junction-to-Case
125
GS
Single Pulse
T
limited
A
V
= 25 °C
1.2
minimum V
150
DS
- Drain-to-Source Voltage (V)
DS(on)
1
GS
BVDSS limited
at which r
DS(on)
IDM limited
10
0.16
0.14
0.12
0.10
0.08
0.06
0.04
30
25
20
15
10
5
0
0.001
2.0
is specified
100 ms
10 ms
On-Resistance vs. Gate-to-Source Voltage
1 s
10 s
dc
100 µs
1 ms
Single Pulse Power, Junction-to-Ambient
0.01
2.5
100
V
GS
T
A
0.1
3.0
- Gate-to-Source Voltage (V)
= 25 °C
Time (sec)
T
A
3.5
= 125 °C
Vishay Siliconix
1
Si5857DU
4.0
10
www.vishay.com
I
D
= 3.6 A
4.5
100
1
5.0
0
0
0
5