SI7220DN-T1-GE3 Vishay, SI7220DN-T1-GE3 Datasheet
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SI7220DN-T1-GE3
Specifications of SI7220DN-T1-GE3
Related parts for SI7220DN-T1-GE3
SI7220DN-T1-GE3 Summary of contents
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... PowerPAK 1212 Bottom View Ordering Information: Si7220DN-T1-E3 (Lead (Pb)-free) Si7220DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction) a ...
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... Si7220DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...
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... T = 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73117 S-83052-Rev. C, 29-Dec- °C J 0.8 1.0 1.2 1.4 Si7220DN Vishay Siliconix 1000 800 C iss 600 400 200 C rss C oss Drain-to-Source Voltage (V) DS Capacitance 2 4.8 A 1.8 D 1.6 1.4 1 ...
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... Si7220DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0.4 0 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 = 250 µA 75 100 125 150 100 * Limited by R DS(on) ...
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... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73117. Document Number: 73117 S-83052-Rev. C, 29-Dec- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7220DN Vishay Siliconix - www.vishay.com 5 ...
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