SI7220DN-T1-GE3 Vishay, SI7220DN-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI7220DN-T1-GE3
• Description: DUAL N-CHANNEL 60-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI7220DN-T1-GE3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8 Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7220DN-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73117
S-83052-Rev. C, 29-Dec-08
0.10
0.08
0.06
0.04
0.02
0.00
10
20
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 4.8 A
0.2
V
On-Resistance vs. Drain Current
GS
= 30 V
4
3
V
= 4.5 V
SD
Q
0.4
g
- Source-to-Drain Voltage (V)
I
- Total Gate Charge (nC)
D
- Drain Current (A)
Gate Charge
6
8
0.6
T
J
= 150 °C
0.8
12
9
T
1.0
J
V
= 25 °C
GS
12
16
= 10 V
1.2
20
15
1.4
1000
0.12
0.10
0.08
0.06
0.04
0.02
0.00
800
600
400
200
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
C
= 4.8 A
rss
10
= 10 V
2
V
T
V
0
J
GS
DS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
20
- Drain-to-Source Voltage (V)
25
Capacitance
4
50
30
C
Vishay Siliconix
iss
C
oss
6
I
75
D
Si7220DN
= 4.8 A
40
www.vishay.com
100
8
50
125
150
10
60
3