SI7613DN-T1-GE3 Vishay

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SI7613DN-T1-GE3

Manufacturer Part Number

SI7613DN-T1-GE3

Description

P-CHANNEL 20-V (D-S) MOSFET

Manufacturer

Vishay

Series

TrenchFET®r

Specifications of SI7613DN-T1-GE3

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

8.7 mOhm @ 17A, 10V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

35A

Vgs(th) (max) @ Id

2.2V @ 250µA

Gate Charge (qg) @ Vgs

87nC @ 10V

Input Capacitance (ciss) @ Vds

2620pF @ 10V

Power - Max

52.1W

Mounting Type

Surface Mount

Package / Case

PowerPAK® 1212-8

Configuration

Single Quad Drain Triple Source

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.0087 Ohms

Drain-source Breakdown Voltage

- 20 V

Gate-source Breakdown Voltage

+/- 16 V

Continuous Drain Current

17 A

Power Dissipation

3.8 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SI7613DN-T1-GE3TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

SI7613DN-T1-GE3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

SI7613DN-T1-GE3

0

Company:

H&T Electronics

H&T Electronics

Part Number:

SI7613DN-T1-GE3

Quantity:

3 000

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