SIE836DF-T1-E3 Vishay
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
SIE836DF-T1-E3
Manufacturer Part Number
SIE836DF-T1-E3
Description
N-CHANNEL 200-V (D-S) MOSFET
Manufacturer
Vishay
Specifications of SIE836DF-T1-E3
Configuration
Single Quad Drain Quad Source Dual Gate
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.13 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
4.1 A
Power Dissipation
5.2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PolarPAK
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details