SIE836DF-T1-E3 Vishay

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SIE836DF-T1-E3

Manufacturer Part Number

SIE836DF-T1-E3

Description

N-CHANNEL 200-V (D-S) MOSFET

Manufacturer

Vishay

Specifications of SIE836DF-T1-E3

Configuration

Single Quad Drain Quad Source Dual Gate

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.13 Ohms

Drain-source Breakdown Voltage

200 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

4.1 A

Power Dissipation

5.2 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

PolarPAK

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

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