SIR164DP-T1-GE3 Vishay, SIR164DP-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIR164DP-T1-GE3
• Description: N-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIR164DP-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 123nC @ 10V
• Input Capacitance (ciss) @ Vds: 3950pF @ 15V
• Power - Max: 69W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 2.05mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0025 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 33.3 A
• Power Dissipation: 5.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SIR164DP-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 64827
S09-0701-Rev. A, 27-Apr-09
0.0028
0.0026
0.0024
0.0022
0.0020
0.0018
70
56
42
28
14
10
On-Resistance vs. Drain Current and Gate Voltage
0
8
6
4
2
0
0.0
0
0
I
D
V
0.5
17
14
DS
= 10 A
V
V
GS
DS
= 10 V
Output Characteristics
Q
= 10 V thru 3 V
- Drain-to-Source Voltage (V)
g
V
V
I
- Total Gate Charge (nC)
D
GS
GS
V
Gate Charge
- Drain Current (A)
1.0
DS
34
28
= 4.5 V
= 10 V
= 15 V
V
DS
1.5
51
42
= 20 V
V
GS
2.0
68
56
= 2 V
New Product
2.5
85
70
5200
4160
3120
2080
1040
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
- 25
rss
I
D
C
= 15 A
T
oss
0.8
C
6
V
V
= 125 °C
DS
GS
Transfer Characteristics
T
C
0
T
J
iss
- Drain-to-Source Voltage (V)
C
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
= 25 °C
V
25
Capacitance
GS
1.6
12
= 4.5 V
V
50
GS
Vishay Siliconix
= 10 V
2.4
18
75
T
SiR164DP
C
= - 55 °C
100
www.vishay.com
3.2
24
125
150
4.0
30
3