ST103S04PFL0P Vishay, ST103S04PFL0P Datasheet - Page 5

• Manufacturer Part Number: ST103S04PFL0P
• Description: SILICON CONTROLLED RECTIFIER,400V V(DRM),105A I(T),TO-209AC
• Manufacturer: Vishay

Specifications of ST103S04PFL0P

• Breakover Current Ibo Max: 3150 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• Forward Voltage Drop: 1.73 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94365
Revision: 29-Apr-08
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Fig. 5 - Maximum Non-Repetitive Surge Current
0
Fig. 6 - Maximum Non-Repetitive Surge Current
0.01
1
0
Number of Equal Amplitude Half Cycle
ST103S Series
ST103S Series
20
At any rated load condition and with
rated V
Average On-State Current (A)
180°
120°
Maximum non repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
DC
40
90°
60°
30°
Pulse Train Duration (s)
RRM
Current Pulses (N)
60
applied following surge
80 100 120
10
0.1
No voltage reapplied
Rated V
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Conduction angle
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Initial T
ST103S Series
Initial T
T
J
Fig. 4 - On-State Power Loss Characteristics
RRM
= 125 °C
Inverter Grade Thyristors
140 160 180
Ø
J
RMS limit
J
reapplied
(Stud Version), 105 A
= 125 °C
= 125 °C
100
1
10 000
1000
0.01
260
240
220
200
180
160
140
120
100
100
0.1
80
60
40
20
Maximum Allowable Ambient Temperature (°C)
1
0
0.001
Fig. 8 - Thermal Impedance Z
25
Fig. 7 - On-State Voltage Drop Characteristics
1
Vishay High Power Products
Steady state value
R
(DC operation)
Instantaneous On-State Voltage (V)
thJC
Square Wave Pulse Duration (s)
= 0.195 K/W
2
0.01
50
T
J
= 25 °C
ST103SP Series
3
0.1
75
ST103S Series
4
ST103S Series
thJC
T
J
100
Characteristic
= 125 °C
1
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5
125
10
6
5