ST103S04PFL0P Vishay, ST103S04PFL0P Datasheet - Page 6

• Manufacturer Part Number: ST103S04PFL0P
• Description: SILICON CONTROLLED RECTIFIER,400V V(DRM),105A I(T),TO-209AC
• Manufacturer: Vishay

Specifications of ST103S04PFL0P

• Breakover Current Ibo Max: 3150 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• Forward Voltage Drop: 1.73 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ST103SP Series
Vishay High Power Products
www.vishay.com
6
10 000
10 000
1000
1000
160
140
120
100
100
100
80
60
40
20
Fig. 9 - Reverse Recovered Charge Characteristics
dI/dt - Rate of Fall of On-State Current (A/µs)
10
10
10
Snubber circuit
R
C
V
ST103S Series
T
s
s
D
J
20
t
p
= 22 Ω
= 0.15 µF
= 125 °C
= 80 % V
10 000
5000
30
5000
ST103S Series
Trapezoidal pulse
T
dI/dt = 50 A/µs
Pulse Basewidth (µs)
Pulse Basewidth (µs)
2000
C
100
100
DRM
= 60 °C
1500
2500
40
1000
50
1000 400 200 100 50 Hz
I
TM
t
p
60
400
= 500 A
For technical questions, contact: [e-mail]
1000
1000
I
200
TM
ST103S Series
Sinusoidal pulse
T
70
Snubber circuit
R
C
V
C
I
D
= 50 A
s
s
= 60 °C
TM
100
I
= 22 Ω
= 0.15 µF
I
= 80 % V
TM
TM
80
= 300 A
= 100 A
= 200 A
50 Hz
Inverter Grade Thyristors
90
(Stud Version), 105 A
DRM
10 000
10 000
Fig. 11 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
100
10 000
10000
1000
1000
100
100
120
110
100
Fig. 10 - Reverse Recovery Current Characteristics
90
80
70
60
50
40
30
20
10
dI/dt - Rate of Fall of Forward Current (A/µs)
10
10
10
Snubber circuit
R
C
V
s
s
D
10 000
20
= 22 Ω
= 0.15 µF
= 80 % V
I
I
I
I
I
TM
TM
TM
TM
TM
= 500 A
= 300 A
= 200 A
= 100 A
= 50 A
5000
30
5000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
100
DRM
100
2500
40
1500
2000
50
1000
1000
t
p
t
p
60
400
Document Number: 94365
ST103S Series
T
J
400
1000
1000
ST103S Series
Trapezoidal pulse
T
dI/dt = 50 A/µs
= 125 °C
200
70
ST103S Series
Sinusoidal pulse
T
C
Snubber circuit
R
C
V
C
D
= 85 °C
s
s
200
= 85 °C
= 22 Ω
= 0.15 µF
Revision: 29-Apr-08
= 80 % V
100
80
100
50 Hz
90
50 Hz
DRM
10 000
10 000
100