SUD25N04-25-E3 Vishay, SUD25N04-25-E3 Datasheet
SUD25N04-25-E3
Specifications of SUD25N04-25-E3
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SUD25N04-25-E3 Summary of contents
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... See SOA curve for voltage derating. Document Number: 71129 S-04558—Rev. B, 27-Aug- N-Channel MOSFET _ Symbol 25_C 125_C 0 25_C 25_C stg Symbol sec R thJA Steady State R thJC SUD25N04-25 Vishay Siliconix D S Limit Unit 40 " –55 to 175 Typical Maximum Unit 3.7 4.5 www.vishay.com C/W 2-1 ...
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... SUD25N04-25 Vishay Siliconix _ Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge c Gate-Source Charge c Gate-Drain Charge ...
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... V – Drain-to-Source Voltage (V) DS Document Number: 71129 S-04558—Rev. B, 27-Aug- 0. –55_C C 0.10 25_C 0.08 125_C 0.06 0.04 0.02 0. iss 32 40 SUD25N04-25 Vishay Siliconix Transfer Characteristics –55_C C 40 25_C – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current – Drain Current (A) D Gate Charge ...
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... SUD25N04-25 Vishay Siliconix On-Resistance vs. Junction Temperature 2 2.0 1.6 1.2 0.8 0.4 0.0 –50 – – Junction Temperature (_C) J Maximum Avalanche Drain Current vs. Case Temperature 100 T – Case Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 –4 –3 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...