... See SOA curve for voltage derating. Document Number: 71129 S-04558—Rev. B, 27-Aug- N-Channel MOSFET _ Symbol 25_C 125_C 0 25_C 25_C stg Symbol sec R thJA Steady State R thJC SUD25N04-25 Vishay Siliconix D S Limit Unit 40 " –55 to 175 Typical Maximum Unit 3.7 4.5 www.vishay.com C/W 2-1 ...
... SUD25N04-25 Vishay Siliconix _ Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge c Gate-Source Charge c Gate-Drain Charge ...
... V – Drain-to-Source Voltage (V) DS Document Number: 71129 S-04558—Rev. B, 27-Aug- 0. –55_C C 0.10 25_C 0.08 125_C 0.06 0.04 0.02 0. iss 32 40 SUD25N04-25 Vishay Siliconix Transfer Characteristics –55_C C 40 25_C – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current – Drain Current (A) D Gate Charge ...
... SUD25N04-25 Vishay Siliconix On-Resistance vs. Junction Temperature 2 2.0 1.6 1.2 0.8 0.4 0.0 –50 – – Junction Temperature (_C) J Maximum Avalanche Drain Current vs. Case Temperature 100 T – Case Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 –4 –3 ...
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