SUD25N04-25-E3 Vishay, SUD25N04-25-E3 Datasheet - Page 3
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SUD25N04-25-E3
Manufacturer Part Number
SUD25N04-25-E3
Description
TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,25A I(D),TO-252AA
Manufacturer
Vishay
Datasheet
1.SUD25N04-25-E3.pdf
(5 pages)
Specifications of SUD25N04-25-E3
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.025 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
25 A
Power Dissipation
33 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SUD25N04-25-E3
Manufacturer:
Vishay/Siliconix
Quantity:
1 900
Company:
Part Number:
SUD25N04-25-E3
Manufacturer:
VISHAY
Quantity:
566
Document Number: 71129
S-04558—Rev. B, 27-Aug-01
1000
100
800
600
400
200
80
60
40
20
25
20
15
10
0
5
0
0
0
0
0
C
rss
2
V
8
V
DS
DS
10
Output Characteristics
– Drain-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
I
Transconductance
D
– Drain Current (A)
Capacitance
16
4
20
C
oss
V
GS
24
6
= 10 V
9 V
T
C
30
= –55_C
2, 3, 4 V
C
32
8
iss
125_C
_
25_C
8 V
7 V
6 V
5 V
10
40
40
0.12
0.10
0.08
0.06
0.04
0.02
0.00
50
40
30
20
10
20
16
12
0
8
4
0
0
0
0
V
I
D
DS
= 25 A
V
On-Resistance vs. Drain Current
1
= 20 V
GS
10
V
5
GS
= 4.5 V
Q
Transfer Characteristics
g
– Gate-to-Source Voltage (V)
I
D
– Total Gate Charge (nC)
2
– Drain Current (A)
Gate Charge
20
10
Vishay Siliconix
3
SUD25N04-25
T
C
25_C
= –55_C
30
15
4
V
GS
= 10 V
40
20
www.vishay.com
5
125_C
50
25
6
2-3