SUD25N04-25-E3 Vishay, SUD25N04-25-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD25N04-25-E3
• Description: TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,25A I(D),TO-252AA
• Manufacturer: Vishay

Specifications of SUD25N04-25-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.025 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 33 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 71129
S-04558—Rev. B, 27-Aug-01
1000
100
800
600
400
200
80
60
40
20
25
20
15
10
0
5
0
0
0
0
0
C
rss
2
V
8
V
DS
DS
10
Output Characteristics
– Drain-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
I
Transconductance
D
– Drain Current (A)
Capacitance
16
4
20
C
oss
V
GS
24
6
= 10 V
9 V
T
C
30
= –55_C
2, 3, 4 V
C
32
8
iss
125_C
_
25_C
8 V
7 V
6 V
5 V
10
40
40
0.12
0.10
0.08
0.06
0.04
0.02
0.00
50
40
30
20
10
20
16
12
0
8
4
0
0
0
0
V
I
D
DS
= 25 A
V
On-Resistance vs. Drain Current
1
= 20 V
GS
10
V
5
GS
= 4.5 V
Q
Transfer Characteristics
g
– Gate-to-Source Voltage (V)
I
D
– Total Gate Charge (nC)
2
– Drain Current (A)
Gate Charge
20
10
Vishay Siliconix
3
SUD25N04-25
T
C
25_C
= –55_C
30
15
4
V
GS
= 10 V
40
20
www.vishay.com
5
125_C
50
25
6
2-3