SUD50NP04-77P-T4E3 Vishay, SUD50NP04-77P-T4E3 Datasheet - Page 10

• Manufacturer Part Number: SUD50NP04-77P-T4E3
• Description: COMPLIMENTARY N&P-CH 40-V (D-S) MOSF
• Manufacturer: Vishay

Specifications of SUD50NP04-77P-T4E3

• Gate Charge Qg: 27 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.046 Ohms, 0.05 Ohms
• Forward Transconductance Gfs (max / Min): 22 S, 20 S
• Drain-source Breakdown Voltage: 40 V, - 40 V
• Continuous Drain Current: 8 A, - 8 A
• Power Dissipation: 10.8 W, 24 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252-4L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUD50NP04-77P
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
10
0.01
22
18
13
100
0.1
35
28
21
14
9
4
0
10
7
0
0.01
1
0
0
Limited by r
* V
Safe Operating Area, Junction-to-Case
Current Derating**, Junction-to-Case
Package Limited
GS
25
25
Power Derating, Junction-to-Case
> minimum V
V
Single Pulse
T
0.1
DS
DS(on)
C
T
T
C
= 25 °C
50
C
- Drain-to-Source Voltage (V)
- Case Temperature (°C)
50
- Case Temperature (°C)
*
75
GS
at which r
75
1
100
100
DS(on)
125
10
is specified
125
150
100 µs
1 ms
10 ms
100 ms
DC
150
100
175
New Product
** The power dissipation P
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
3.5
2.8
2.1
1.4
0.7
7
6
4
3
1
0
0
0
0
Current Derating**, Junction-to-Ambient
Power Derating, Junction-to-Ambient
25
25
T
T
A
50
A
D
- Ambient Temperature (°C)
- Ambient Temperature (°C)
50
is based on T
75
75
S-80109-Rev. B, 21-Jan-08
100
Document Number: 73989
J(max)
100
125
= 150 °C, using
125
150
150
175