SUD50NP04-77P-T4E3 Vishay, SUD50NP04-77P-T4E3 Datasheet - Page 11

• Manufacturer Part Number: SUD50NP04-77P-T4E3
• Description: COMPLIMENTARY N&P-CH 40-V (D-S) MOSF
• Manufacturer: Vishay

Specifications of SUD50NP04-77P-T4E3

• Gate Charge Qg: 27 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.046 Ohms, 0.05 Ohms
• Forward Transconductance Gfs (max / Min): 22 S, 20 S
• Drain-source Breakdown Voltage: 40 V, - 40 V
• Continuous Drain Current: 8 A, - 8 A
• Power Dissipation: 10.8 W, 24 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252-4L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 73989
S-80109-Rev. B, 21-Jan-08
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0.01
0.1
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1
http://www.vishay.com/ppg?73989.
1
10
10
-4
-4
0.2
0.1
0.1
0.05
0.2
Duty Cycle = 0.5
Duty Cycle = 0.5
0.02
Single Pulse
0.02
0.05
10
Single Pulse
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
SUD50NP04-77P
DM
JM
- T
t
A
1
1
= P
Vishay Siliconix
t
2
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 52 °C/W
www.vishay.com
1000
1
0
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