SDP8405-002 Honeywell Sensing and Control, SDP8405-002 Datasheet - Page 2

• Manufacturer Part Number: SDP8405-002
• Description: TRANSISTOR, PHOTO, NPN, T-1
• Manufacturer: Honeywell Sensing and Control

Specifications of SDP8405-002

• Transistor Polarity: NPN
• Power Consumption: 70mW
• Viewing Angle: 20°
• No. Of Pins: 2
• Power Dissipation Pd: 70mW
• Rise Time: 15µs
• Light Current: 14mA
• Dark Current: 100nA
• C-e Breakdown Voltage: 5V
• Voltage - Collector Emitter Breakdown (max): 30V
• Current - Collector (ic) (max): 14mA
• Current - Dark (id) (max): 100nA
• Wavelength: 935nm
• Power - Max: 70mW
• Mounting Type: Through Hole
• Orientation: Top View
• Package / Case: Radial, 3mm Dia (T 1)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Soldering Temperature (5 sec)
Notes
0.18 mW/¡C.
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SDP8405
Silicon Phototransistor
1. Derate linearly from 25¡C free-air temperature at the rate of
PARAMETER
SYMBOL
30 V
5 V
70 mW [À]
-40¡C to 85¡C
-40¡C to 85¡C
240¡C
MIN
TYP
MAX
UNITS
SCHEMATIC
TEST CONDITIONS
117