SDP8405-002 Honeywell Sensing and Control, SDP8405-002 Datasheet - Page 3

• Manufacturer Part Number: SDP8405-002
• Description: TRANSISTOR, PHOTO, NPN, T-1
• Manufacturer: Honeywell Sensing and Control

Specifications of SDP8405-002

• Transistor Polarity: NPN
• Power Consumption: 70mW
• Viewing Angle: 20°
• No. Of Pins: 2
• Power Dissipation Pd: 70mW
• Rise Time: 15µs
• Light Current: 14mA
• Dark Current: 100nA
• C-e Breakdown Voltage: 5V
• Voltage - Collector Emitter Breakdown (max): 30V
• Current - Collector (ic) (max): 14mA
• Current - Dark (id) (max): 100nA
• Wavelength: 935nm
• Power - Max: 70mW
• Mounting Type: Through Hole
• Orientation: Top View
• Package / Case: Radial, 3mm Dia (T 1)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SWITCHING TIME TEST CIRCUIT
Fig. 1
Fig. 3
SDP8405
Silicon Phototransistor
118
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Responsivity vs
Angular Displacement
Dark Current vs
Temperature
-40
-30
Angular displacement - degrees
-20
-10
0
+10 +20 +30 +40
gra_047.ds4
gra_301.cdr
cir_015.cdr
SWITCHING WAVEFORM
Fig. 2
Fig. 4
100
2.0
1.6
1.2
0.8
0.4
0.0
10
1
Collector Current vs
Ambient Temperature
Non-Saturated Switching Time vs
Load Resistance
10
0
10
Ambient temperature - °C
Load resistance - Ohms
20
100
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
30
40
1000
50
60
70
gra_039.ds4
gra_041.ds4
10000
cir_004.cdr
80