MGA-655T6-BLKG Avago Technologies US Inc., MGA-655T6-BLKG Datasheet - Page 2

• Manufacturer Part Number: MGA-655T6-BLKG
• Description: IC,Microwave/Millimeter Wave Amplifier,SINGLE,GAAS,LLCC,6PIN,PLASTIC
• Manufacturer: Avago Technologies US Inc.
• Type: Low Noiser

Specifications of MGA-655T6-BLKG

• Current - Supply: 10mA
• Frequency: 2.5GHz ~ 4GHz
• Gain: 14.7dB
• Noise Figure: 1.17dB
• P1db: 12dBm
• Package / Case: 6-XFDFN Exposed Pad
• Rf Type: General Purpose
• Test Frequency: 3.5GHz
• Voltage - Supply: 3V
• Amplifier Type: MMIC
• Bandwidth: 2.5 to 4 GHz
• Current, Input Bias: 10 mA
• Impedance, Thermal: 75 °C/W
• Power Dissipation: 66 mW
• Voltage, Supply: 4 V
• Manufacturer's Type: Low Noise Amplifier
• Number Of Channels: 1
• Supply Current: 14@3VmA
• Frequency (max): 4GHz
• Operating Supply Voltage (typ): 3V
• Package Type: Ultra Thin profile
• Mounting: Surface Mount
• Pin Count: 6
• Noise Figure (typ): 1.2@3500MHzdB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Rating
Process Capability for Gain
LSL=12.8, Nominal=14.7, USL=17
Note:
Distribution data sample size is 500 samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have
nominal values anywhere between the upper and lower limits.
2
Product Consistency Distribution Charts
Figure 1. Gain @ 3.5 GHz , V
Symbol
V
V
P
P
T
T
diss
j
STG
dd
bypass
in,max
Parameter
Device Voltage, RF Output to Ground
Control Voltage
CW RF Input Power
Total Power Dissipation
Junction Temperature
Storage Temperature
d
=3V, V
bypass
[1]
T
=2.7V
A
= 25°C
[3]
Process Capability for NF
Nominal=1.2, USL=1.6
Figure 2. NF @ 3.5 GHz , V
Units
V
V
dBm
mW
°C
°C
d
=3V, V
Absolute Max.
4
4
+14
66
150
-65 to 150
bypass
=2.7V
Thermal Resistance
(V
Notes:
1. Operation of this device in excess of any of
2. Thermal resistance measured using Infra-
3. For module substrate temperature, Tsub,
Process Capability for Ids
Nominal=10.1, USL=14
Figure 3. I
dd
these limits may cause permanent damage.
Red Measurement Technique.
>94°C derate the device power at 50
mW per °C rise in board (module belly)
temperature.
= 3.0 V, I
ds
@ 3.5 GHz , V
d
= 10 mA), Tjc = 75°C/W
[2,3]
d
=3V, V
bypass
=2.7V