VMMK-2203-BLKG Avago Technologies US Inc., VMMK-2203-BLKG Datasheet - Page 8

• Manufacturer Part Number: VMMK-2203-BLKG
• Description: GaAsCap Amplifier
• Manufacturer: Avago Technologies US Inc.

Specifications of VMMK-2203-BLKG

• Current - Supply: 25mA
• Frequency: 900MHz ~ 11GHz
• Gain: 16.5dB
• Noise Figure: 2dB
• P1db: 5dBm
• Package / Case: 0402 (1005 Metric) - 1.00mm L x 0.50mm W x 0.25mm H
• Rf Type: General Purpose
• Test Frequency: 6GHz
• Voltage - Supply: 5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 516-2290; VMMK-2203-BLKG

VMMK-2203 Application and Usage
Biasing and Operation
The VMMK-2203 is biased with a positive supply connected
bias-tee as shown in Figure 19. The recommended supply
voltage is between 3 and 5V. The corresponding drain
currents are approximately 15 and 25 mA. Biasing the
device at 5V results in higher gain, lower noise figure,
higher IP3 and P1dB. In a typical application, the bias-tee
can be constructed using lumped elements. The value of
the output inductor can have a major effect on both low
and high frequency operation. The demo board uses an
8.2 nH inductor that has self resonant frequency higher
than the maximum desired frequency of operation.
Figure 19. Usage of the VMMK-2203
At frequencies higher than 6 GHz, it may be advanta-
geous to use a quarter-wave long microstrip line to act as
a high impedance at the desired frequency of operation.
This technique proves a good solution but only over rela-
tively narrow bandwidths. Another approach for using
the VMMK-2203 in broadband is to put in series two
different value inductors with the smaller value inductor
placed closest to the device and favoring the higher fre-
quencies. The larger value inductor will then offer better
low frequency performance by not loading the output
of the device. The parallel combination of the 100pF and
0.1uF capacitors provides a low impedance in the band of
operation and at lower frequencies. They should be placed
as close as possible to the inductor. The low frequency
bypass provides good rejection of power supply noise
and also provides a low impedance termination for
third order low frequency mixing products that will be
generated when multiple in-band signals are injected into
any amplifier.
Refer the Absolute Maximum Ratings table for allowed DC
and thermal conditions.
8
Input
to the output pin through an external user supplied
100 pF
50 Ohm line
Size: 1.1 mm x 0.6 mm (0402 component)
Input
Pad
Amp
Ground
Pad
Output
Pad
50 Ohm line
Vdd
0.1 uF
100 pF
8.2 nH
100 pF
Output
Figure 20. Evaluation/Test Board (available to qualified customer request)
S Parameter Measurements
The S parameters are measured on a 300um G-S-G
(ground signal ground) printed circuit board substrate.
Calibration is achieved with a series of through, short
and open substrates from which an accurate set of S pa-
rameters is created. The test board is .016 inch thickness
RO4350. Grounding of the device is achieved with a single
plated through hole directly under the device. The effect
of this plated through hole is included in the S parameter
measurements and is difficult to de-embed accurately.
Since the maximum recommended printed circuit board
thickness is nominally .020 inch, then the nominal effect
of printed circuit board grounding can be considered to
have already been included the published S parameters.
The product consistency distribution charts shown on
page 2 represent data taken by the production wafer probe
station using a 300um G-S wafer probe. The ground-signal
probing that is used in production allows the device to be
probed directly at the device with minimal common lead
inductance to ground. Therefore there will be a slight dif-
ference in the nominal gain obtained at the test frequency
using the 300um G-S wafer probe versus the 300um G-S-G
printed circuit board substrate method.