VMMK-2403-BLKG Avago Technologies US Inc., VMMK-2403-BLKG Datasheet - Page 8

• Manufacturer Part Number: VMMK-2403-BLKG
• Description: GaAsCap Amplifier
• Manufacturer: Avago Technologies US Inc.

Specifications of VMMK-2403-BLKG

• Current - Supply: 37mA
• Frequency: 2GHz ~ 4GHz
• Gain: 16dB
• Noise Figure: 1.7dB
• P1db: 16.5dB
• Package / Case: 0402 (1005 Metric) - 1.00mm L x 0.50mm W x 0.25mm H
• Rf Type: General Purpose
• Test Frequency: 3GHz
• Voltage - Supply: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 516-2292; VMMK-2403-BLKG

Input
Input
VMMK-2403 Application and Usage
Figure 19. Usage of the VMMK-2403
Figure 20. Evaluation/Test Board (available to qualified customer request)
Figure 21. Example application of VMMK-2403 at 3.5GHz
Biasing and Operation
The VMMK-2403 is normally biased with a positive drain
supply connected to the output pin through an external
bias-tee and with bypass capacitors as shown in Figure
19. The recommended drain supply voltage is 3 V and
the corresponding drain current is approximately 38mA.
8
100 pF
50 Ohm line
50 Ohm line
Size: 1.1 mm x 0.6 mm (0402 component)
Input
Size: 1.1 mm x 0.6 mm (0402 component)
Pad
Input
Pad
Amp
Amp
Ground
Ground
Pad
Pad
Output
Pad
Output
Pad
50 Ohm line
50 Ohm line
Vdd
Vdd
0.1 uF
100 pF
Bias-Tee
15 nH
100 pF
100 pF
0.1 uF
Output
Output
Aspects of the amplifier performance may be improved
over a narrower bandwidth by application of additional
conjugate, linearity, or low noise (Wopt) matching.
Biasing the device at 3V results in slightly lower noise
figure. In a typical application, the bias-tee can be con-
structed using lumped elements. The value of the output
inductor can have a major effect on both low and high
frequency operation. The demo board uses a 15 nH
inductor which provides an optimum value for 2 to 4 GH
operation. If operation is desired at frequencies higher
than 4 GHz then a smaller value such as 8.2 nH may be
required to keep the self resonant frequency higher than
the maximum desired frequency of operation.
Another approach for broadbanding the VMMK-2403 is
to series two different value inductors with the smaller
value inductor placed closest to the device and favoring
the higher frequencies. The larger value inductor will then
offer better low frequency performance by not loading
the output of the device. The parallel combination of the
100pF and 0.1uF capacitors provide a low impedance
in the band of operation and at lower frequencies and
should be placed as close as possible to the inductor. The
low frequency bypass provides good rejection of power
supply noise and also provides a low impedance termi-
nation for third order low frequency mixing products
that will be generated when multiple in-band signals are
injected into any amplifier.
Refer the Absolute Maximum Ratings table for allowed DC
and thermal conditions.
S Parameter Measurements
The S parameters are measured on a 300um G-S-G
(ground signal ground) printed circuit board substrate.
Calibration is achieved with a series of through, short
and open substrates from which an accurate set of S pa-
rameters is created. The test board is .016 inch thickness
RO4350. Grounding of the device is achieved with a single
plated through hole directly under the device. The effect
of this plated through hole is included in the S parameter
measurements and is difficult to de-embed accurately.
Since the maximum recommended printed circuit board
thickness is nominally .020 inch, then the nominal effect
of printed circuit board grounding can be considered to
have already been included the published S parameters.
The product consistency distribution charts shown on
page 2 represent data taken by the production wafer probe
station using a 300um G-S wafer probe. The ground-signal
probing that is used in production allows the device to be
probed directly at the device with minimal common lead
inductance to ground. Therefore there will be a slight dif-
ference in the nominal gain obtained at the test frequency
using the 300um G-S wafer probe versus the 300um G-S-G
printed circuit board substrate method.