SILIRCMOSFETSOT2310N10 GARRETT ELECTRONICS, SILIRCMOSFETSOT2310N10 Datasheet - Page 3
SILIRCMOSFETSOT2310N10
Manufacturer Part Number
SILIRCMOSFETSOT2310N10
Description
Transistor Kit
Manufacturer
GARRETT ELECTRONICS
Datasheet
1.SILIRCMOSFETSOT2310N10.pdf
(5 pages)
Specifications of SILIRCMOSFETSOT2310N10
Peak Reflow Compatible (260 C)
Yes
Kit Contents
Notebook With 10 Values 10 EA 8V - 60V SOT-23
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 70833
S-61190-Rev. D, 03-Jul-06
0.30
0.25
0.20
0.15
0.10
0.05
12
10
5
4
3
2
1
0
8
6
4
2
0
0
0
0
0
V
V
I
0.5
D
GS
DS
= 3.5 A
On-Resistance vs. Drain Current
2
= 1.8 V
= 4 V
2
V
DS
1.0
Q
V
Output Characteristics
g
GS
- Drain-to-Source Voltage (V)
- T otal Gate Charge (nC)
I
D
4
= 4.5 thru 2.5 V
1.5
- Drain Current (A)
Gate Charge
4
2.0
6
6
2.5
8
V
V
GS
GS
3.0
= 2.5 V
1, 0.5 V
= 4.5 V
8
1.5 V
10
2 V
3.5
10
4.0
12
2000
1600
1200
1.4
1.2
1.0
0.8
0.6
800
400
12
10
8
6
4
2
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
V
- 25
rss
I
D
GS
= 3.5 A
= 4.5 V
0.5
V
V
C
T
DS
GS
J
Transfer Characteristics
oss
0
2
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
1.0
50
C
Vishay Siliconix
4
T
iss
C
25 °C
= - 55 °C
1.5
75
Si2305DS
www.vishay.com
100
6
2.0
125 °C
125
150
2.5
8
3