SILIRCMOSFETSOT2310N10 GARRETT ELECTRONICS, SILIRCMOSFETSOT2310N10 Datasheet - Page 3

• Manufacturer Part Number: SILIRCMOSFETSOT2310N10
• Description: Transistor Kit
• Manufacturer: GARRETT ELECTRONICS

Specifications of SILIRCMOSFETSOT2310N10

• Peak Reflow Compatible (260 C): Yes
• Kit Contents: Notebook With 10 Values 10 EA 8V - 60V SOT-23
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 70833
S-61190-Rev. D, 03-Jul-06
0.30
0.25
0.20
0.15
0.10
0.05
12
10
5
4
3
2
1
0
8
6
4
2
0
0
0
0
0
V
V
I
0.5
D
GS
DS
= 3.5 A
On-Resistance vs. Drain Current
2
= 1.8 V
= 4 V
2
V
DS
1.0
Q
V
Output Characteristics
g
GS
- Drain-to-Source Voltage (V)
- T otal Gate Charge (nC)
I
D
4
= 4.5 thru 2.5 V
1.5
- Drain Current (A)
Gate Charge
4
2.0
6
6
2.5
8
V
V
GS
GS
3.0
= 2.5 V
1, 0.5 V
= 4.5 V
8
1.5 V
10
2 V
3.5
10
4.0
12
2000
1600
1200
1.4
1.2
1.0
0.8
0.6
800
400
12
10
8
6
4
2
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
V
- 25
rss
I
D
GS
= 3.5 A
= 4.5 V
0.5
V
V
C
T
DS
GS
J
Transfer Characteristics
oss
0
2
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
1.0
50
C
Vishay Siliconix
4
T
iss
C
25 °C
= - 55 °C
1.5
75
Si2305DS
www.vishay.com
100
6
2.0
125 °C
125
150
2.5
8
3