MSA-0300-GP4 Avago Technologies US Inc., MSA-0300-GP4 Datasheet - Page 2

• Manufacturer Part Number: MSA-0300-GP4
• Description: GAAS AND SILICON RFIC
• Manufacturer: Avago Technologies US Inc.
• Type: General Purposer

Specifications of MSA-0300-GP4

• Frequency Rf: 6GHz
• Noise Figure Typ: 6dB
• Supply Voltage Range: 4.5V To 5.5V
• Supply Current: 50mA
• Power Dissipation Pd: 425mW
• Rf Type: General Purpose
• Gain: 12.5dB
• Frequency: 100MHz ~ 3GHz
• Noise Figure: 6dB
• P1db: 10dBm
• Package / Case: Die
• Test Frequency: 1GHz
• Voltage - Supply: 4.5 V ~ 5.5 V
• Number Of Channels: 1
• Frequency (max): 25GHz
• Output Power: 10@1000MHzdBm
• Power Supply Requirement: Single
• Single Supply Voltage (min): 4.5V
• Single Supply Voltage (typ): 5V
• Single Supply Voltage (max): 5.5V
• Package Type: Chip
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Filter Terminals: SMD
• Frequency Range: 0.1GHz To 3GHz
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Supply: -
• Lead Free Status / Rohs Status: Compliant

MSA-0300 Absolute Maximum Ratings
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TMounting Surface (T
3. Derate at 22.2 mW/°C for T
4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods.
Electrical Specifications
Notes:
1. The recommended operating current range for this device is 20 to 50 mA.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.
Part Number Ordering Information

Parameter
Device Current
Power Dissipation
RF Input Power
Junction Temperature
Storage Temperature
Symbol
G
∆G
f
VSWR
NF
P
IP
t
V
dV/dT
3 dB
D
See MEASUREMENTS section “Thermal Resistance” for more information.
1 dB
d
Typical performance as a function of current is on the following page.
P
3
P
MSA-0300-GP4
Power Gain (|S
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50 Ω Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
Parameters and Test Conditions
Part Number
[2,3]
MS
) = 25°C.
[1]
C
> 181°C.
21
, T
|
A
2
= 25°C
)
[2]
: I
Absolute Maximum
d
= 35 mA, Z
Devices Per Tray
-65 to 200 ˚C
+13 dBm
425 mW
80 mA
200˚C
100
O
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 0.1 GHz
f = 0.1 to 1.8 GHz
f = 0.1 to 3.0 GHz
f = 0.1 to 3.0 GHz
= 50 Ω
[1]
Thermal Resistance
Units
m V/˚C
dBm
dBm
psec
G H z
dB
dB
dB
V
θ
jc
= 45 ˚C/W
Min.
4.5
Typ.
1.8:1
1.8:1
± 0. 6
12.5
10.0
23.0
Ð8.0
125
[2,4]
2.8
6.0
5.0
:
Max.
5.5