MSA-0300-GP4 Avago Technologies US Inc., MSA-0300-GP4 Datasheet - Page 3

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MSA-0300-GP4

Manufacturer Part Number
MSA-0300-GP4
Description
GAAS AND SILICON RFIC
Manufacturer
Avago Technologies US Inc.
Type
General Purposer
Datasheet

Specifications of MSA-0300-GP4

Frequency Rf
6GHz
Noise Figure Typ
6dB
Supply Voltage Range
4.5V To 5.5V
Supply Current
50mA
Power Dissipation Pd
425mW
Rf Type
General Purpose
Gain
12.5dB
Frequency
100MHz ~ 3GHz
Noise Figure
6dB
P1db
10dBm
Package / Case
Die
Test Frequency
1GHz
Voltage - Supply
4.5 V ~ 5.5 V
Number Of Channels
1
Frequency (max)
25GHz
Output Power
10@1000MHzdBm
Power Supply Requirement
Single
Single Supply Voltage (min)
4.5V
Single Supply Voltage (typ)
5V
Single Supply Voltage (max)
5.5V
Package Type
Chip
Dual Supply Voltage (min)
Not RequiredV
Dual Supply Voltage (typ)
Not RequiredV
Dual Supply Voltage (max)
Not RequiredV
Filter Terminals
SMD
Frequency Range
0.1GHz To 3GHz
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Supply
-
Lead Free Status / Rohs Status
Compliant
MSA-0300 Typical Scattering Parameters[1] (Z
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE MODELS section.
Typical Performance, T
(unless otherwise noted)
Figure 1. Typical Power Gain vs. Frequency, TA = 25°C,
Id = 35 mA.
Figure 4. Output Power at 1 dB Gain Compression vs.
Frequency.
14
12
10
18
15
12
8
6
4
2
0
9
6
3
0
Freq.
GHz
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
I d = 50 mA
I d = 20 mA
I d = 35 mA
Gain Flat to DC
0.1
0.2 0.3
FREQUENCY (GHz)
FREQUENCY (GHz)
0.3 0.5
Mag
0.5
.13
.13
.12
.11
.11
.10
.11
.16
.23
.29
.35
.38
.41
.43
S
1.0
11
1.0
A
= 25°C
-179
-179
-179
-177
-172
-166
-145
-140
-141
-149
-157
-164
A n g
179
153
2.0
3.0
6.0
4.0
12.6
12.6
12.5
12.5
12.4
12.4
12.0
11.5
10.8
dB
9.8
8.7
7.6
5.5
3.6
7.0
6.5
6.0
5.5
5.0
14
12
10
8
6
4
Figure 5. Noise Figure vs. Frequency.
Figure 2. Power Gain vs. Current.
15
0.1
Mag
S
O
4.28
4.27
4.24
4.22
4.19
4.15
4.00
3.76
3.47
3.10
2.72
2.40
1.88
1.51
21
= 50 Ω, T
20
0.2 0.3
FREQUENCY (GHz)
25
A n g
177
172
165
158
152
144
126
109
97
82
67
55
35
18
0.5
I d (mA)
A
30
= 25°C, Id = 35 mA)
I d = 20 mA
I d = 35 mA
I d = 50 mA
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
1.0
-18.6
-18.3
-18.3
-18.2
-17.8
-17.7
-17.1
-16.2
-15.6
-15.2
-14.5
-14.3
-13.7
-13.3
35
dB
2.0
40
S
Mag
.118
.121
.121
.123
.129
.130
.139
.154
.166
.173
.188
.193
.206
.217
50
12
A n g
13
12
11
11
24
21
22
17
14
7
6
5
4
Ð55 Ð25
Figure 3. Output Power at 1 dB Gain Compression,
NF and Power Gain vs. Mounting Surface Tempera-
ture, f = 1.0 GHz, Id = 35 mA.
2
3
5
8
1
1
2
2
TEMPERATURE (
Mag
.09
.10
.12
.14
.17
.20
.24
.27
.28
.28
.27
.25
.21
.21
+25
G P
P 1 dB
NF
S
22
-104
-122
-133
-145
-148
-146
-134
-137
A n g
- 13
- 27
- 48
- 65
- 76
- 85
o
C)
+85
+125
1.21
1.19
1.19
1.18
1.15
1.14
1.09
1.03
0.99
0.99
0.97
1.00
1.14
1.27
11
10
k
9
8

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