BDW63B-S Bourns Inc., BDW63B-S Datasheet

BDW63B-S

Manufacturer Part Number

BDW63B-S

Description

NPN DARLINGTON 80V 6A

Manufacturer

Bourns Inc.

Datasheet

1.BDW63B-S.pdf (4 pages)

Specifications of BDW63B-S

Polarity

NPN

Number Of Elements

Collector-emitter Voltage

80V

Collector-base Voltage(max)

80V

Emitter-base Voltage (max)

Collector Current (dc) (max)

Dc Current Gain

750@2A@3V/100@6A@3V

Operating Temp Range

-65C to 150C

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

3 +Tab

Package Type

TO-220

Lead Free Status / Rohs Status

Compliant

Current page: 1 of 4
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absolute maximum ratings at 25°C case temperature (unless otherwise noted)

NOTES: 1. These values apply when the base-emitter diode is open circuited.

AUGUST 1978 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

Collector-base voltage (I

Collector-emitter voltage (I

Emitter-base voltage

Continuous collector current

Continuous base current

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

Operating junction temperature range

Operating temperature range

Operating free-air temperature range

●

R O D U C T

Designed for Complementary Use with

BDW64, BDW64A, BDW64B, BDW64C and

BDW64D

60 W at 25°C Case Temperature

6 A Continuous Collector Current

Minimum h

2. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I

BE(off)

= 0, R

of 750 at 3 V, 2 A

= 0)

= 0.1 Ω, V

I N F O R M A T I O N

= 0) (see Note 1)

= 20 V.

RATING

BDW63, BDW63A, BDW63B, BDW63C, BDW63D

Pin 2 is in electrical contact with the mounting base.

NPN SILICON POWER DARLINGTONS

BDW63

BDW63A

BDW63B

BDW63C

BDW63D

BDW63

BDW63A

BDW63B

BDW63C

BDW63D

TO-220 PACKAGE

(TOP VIEW)

SYMBOL

½LI

CBO

CEO

stg

tot

B(on)

= 5 mA, R

-65 to +150

VALUE

100

120

100

120

0.1

= 100 Ω,

MDTRACA

UNIT

°C

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BDW63B-S Summary of contents

Page 1

... This rating is based on the capability of the transistor to operate safely in a circuit of mH 0.1 Ω BE(off AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDW63, BDW63A, BDW63B, BDW63C, BDW63D NPN SILICON POWER DARLINGTONS Pin electrical contact with the mounting base. RATING BDW63 BDW63A BDW63B BDW63C BDW63D ...

Page 2

... BDW63, BDW63A, BDW63B, BDW63C, BDW63D NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter (BR)CEO C breakdown voltage Collector-emitter CEO CE cut-off current 100 V CB Collector cut-off V = 120 CBO current 100 120 V CB Emitter cut-off EBO EB current ...

Page 3

... Figure 1. 3·0 2·5 2·0 1·5 1·0 0· AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDW63, BDW63A, BDW63B, BDW63C, BDW63D NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS COLLECTOR-EMITTER SATURATION VOLTAGE TCS120AD 2· 300 µs, duty cycle < -40°C p ...

Page 4

... BDW63, BDW63A, BDW63B, BDW63C, BDW63D NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS 10 1·0 0·1 4 MAXIMUM FORWARD-BIAS SAFE OPERATING AREA BDW63 BDW63A BDW63B BDW63C BDW63D 1·0 10 100 V - Collector-Emitter Voltage - V CE Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 100 T - Case Temperature - °C C Figure 5 ...

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