BDW63B Bourns Inc., BDW63B Datasheet
BDW63B
Specifications of BDW63B
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BDW63B Summary of contents
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... This rating is based on the capability of the transistor to operate safely in a circuit of mH 0.1 Ω BE(off AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDW63, BDW63A, BDW63B, BDW63C, BDW63D NPN SILICON POWER DARLINGTONS Pin electrical contact with the mounting base. RATING BDW63 BDW63A BDW63B BDW63C BDW63D ...
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... BDW63, BDW63A, BDW63B, BDW63C, BDW63D NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter (BR)CEO C breakdown voltage Collector-emitter CEO CE cut-off current 100 V CB Collector cut-off V = 120 CBO current 100 120 V CB Emitter cut-off EBO EB current ...
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... Figure 1. 3·0 2·5 2·0 1·5 1·0 0· AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDW63, BDW63A, BDW63B, BDW63C, BDW63D NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS COLLECTOR-EMITTER SATURATION VOLTAGE TCS120AD 2· 300 µs, duty cycle < -40°C p ...
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... BDW63, BDW63A, BDW63B, BDW63C, BDW63D NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS 10 1·0 0·1 4 MAXIMUM FORWARD-BIAS SAFE OPERATING AREA BDW63 BDW63A BDW63B BDW63C BDW63D 1·0 10 100 V - Collector-Emitter Voltage - V CE Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 100 T - Case Temperature - °C C Figure 5 ...