BDW63B Bourns Inc., BDW63B Datasheet - Page 3
BDW63B
Manufacturer Part Number
BDW63B
Description
Darlington Transistors 60W 6A NPN
Manufacturer
Bourns Inc.
Datasheet
1.BDW63B.pdf
(4 pages)
Specifications of BDW63B
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Package / Case
TO-220
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
80 V
Maximum Dc Collector Current
6 A
Maximum Collector Cut-off Current
200 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
750, 100
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
40000
10000
R O D U C T
1000
100
0·5
V
t
p
CE
=
= 300 µs, duty cycle < 2%
TYPICAL DC CURRENT GAIN
COLLECTOR CURRENT
3 V
1·0
I
C
- Collector Current - A
I N F O R M A T I O N
Figure 1.
vs
3·0
2·5
2·0
1·5
1·0
0·5
0·5
BASE-EMITTER SATURATION VOLTAGE
T
T
T
C
C
C
I
t
TYPICAL CHARACTERISTICS
B
p
= -40°C
= 25°C
= 100°C
T
T
T
= I
= 300 µs, duty cycle < 2%
C
C
C
= -40°C
= 25°C
= 100°C
C
TCS120AD
/ 100
COLLECTOR CURRENT
1·0
I
C
- Collector Current - A
10
Figure 3.
BDW63, BDW63A, BDW63B, BDW63C, BDW63D
vs
COLLECTOR-EMITTER SATURATION VOLTAGE
2·0
1·5
1·0
0·5
0
0·5
t
I
NPN SILICON POWER DARLINGTONS
B
p
= I
= 300 µs, duty cycle < 2%
C
/ 100
TCS120AF
COLLECTOR CURRENT
1·0
I
C
- Collector Current - A
10
Figure 2.
vs
T
T
T
C
C
C
= -40°C
= 25°C
= 100°C
TCS120AE
10
3