HSDL-4270 Avago Technologies US Inc., HSDL-4270 Datasheet

HSDL-4270

Manufacturer Part Number

HSDL-4270

Description

Infrared Emitters Lamp T13/4

Manufacturer

Avago Technologies US Inc.

Datasheet

1.HSDL-4270.pdf (4 pages)

Specifications of HSDL-4270

Radiant Intensity

100 mW/sr

Maximum Forward Current

100 mA

Maximum Power Dissipation

170 mW

Maximum Operating Temperature

+ 85 C

Minimum Operating Temperature

- 40 C

Lens Shape

Circular

Wavelength

940 nm

Package / Case

T-1 3/4 (5 mm)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

HSDL-4270

Manufacturer:

LITEON

Quantity:

40 000

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HSDL-4270

High-Performance T-1¾ (5mm) AlGaAs Infrared (940nm) Lamp

Datasheet

Description

The HSDL-4270 Infrared emitter was designed

for applications that require high power and

low forward voltage. It utilizes Aluminum

Galium Arsenide (AlGaAs) LED technology and

is optimized for efficiency at emission

wavelengths of 940 nm. The material used

produces high radiant efficiency over a wide

range of currents. The emitter is packaged in

clear T-1¾ (5mm) package.

5.0 ± 0.2

0.50 ± 0.1

0.7 max.

5.8 ± 0.2

CATHODE

FLAT

2.54

Features

• • • • • High Power AlGaAs LED Technology

• • • • • 940 nm Wavelength

• • • • • T-1¾ Package

• • • • • Low Cost

• • • • • Low Forward Voltage: 1.3V at 20mA

Applications

• • • • • Industrial Infrared Equipments and Applications

• • • • • Consumer Electronics (Infrared Remote Controller

• • • • • Infrared spotlight for cameras

• • • • • Discrete Interrupters

• • • • • Infrared source for optical counters and card readers

Part Number

HSDL-4270

(Smoke Detectors etc)

etc)

Lead Form

Straight

Shipping Option

Bulk

Related parts for HSDL-4270

HSDL-4270 Summary of contents

Page 1

... HSDL-4270 High-Performance T-1¾ (5mm) AlGaAs Infrared (940nm) Lamp Datasheet Description The HSDL-4270 Infrared emitter was designed for applications that require high power and low forward voltage. It utilizes Aluminum Galium Arsenide (AlGaAs) LED technology and is optimized for efficiency at emission wavelengths of 940 nm. The material used produces high radiant efficiency over a wide range of currents ...

Page 2

Absolute Maximum Ratings at 25° ° ° ° ° C Parameter Peak Forward Current Forward Current Power Dissipation Reverse Voltage Storage Temperature LED Junction Temperature Lead Soldering Temperature Notes: 1. Derate as shown in Figure 6. Recommended Operating Conditions Parameter ...

Page 3

Peak Wavelength Vs Rel Radiant Intensity 1.2 1.0 0.8 0.6 0.4 0.2 0 800 850 900 Peak Wavelength - nm Figure 1. Relative Radiant Intensity vs. Wavelength Peak Forward Voltage Vs Peak Forward Current 1000 100 0.5 ...

Page 4

Vs Relative Radiant Intensity 1.2 1.0 0.8 0.6 0.4 0.2 0 -90 -80 -70 -60 -50 -40 -30 -20 - Angle in degrees Figure 7. Radiant Intensity vs. Angular ...

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