ZXMC3AMCTA Diodes Zetex, ZXMC3AMCTA Datasheet - Page 8

• Manufacturer Part Number: ZXMC3AMCTA
• Description: MOSFET N+P 30V 2.9A/2.1A DFN
• Manufacturer: Diodes Zetex

Specifications of ZXMC3AMCTA

• Input Capacitance (ciss) @ Vds: 190pF @ 25V
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 2.1A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3.9nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMC3AMCTATR

Typical Electrical Characteristics – Q2 P-Channel
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
0.01
0.1
0.1
0.1
10
10
Typical Transfer Characteristics
1
1
1
1.5
On-Resistance v Drain Current
T = 150°C
-V
T = 25°C
0.1
0.1
2V
DS
-V
-V
2.0
= 10V
Output Characteristics
DS
GS
-V
-I
GS
D
Drain-Source Voltage (V)
Gate-Source Voltage (V)
T = 25°C
2.5
Drain Current (A)
2.5V
1
3.0
1
10V
3V
3.5
7V
3.5V
4V
T = 25°C
10
4.0
5V
10
2V
3.5V
2.5V
5V
4V
3V
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-V
10V
7V
GS
4.5
8 of 11
0.01
Normalised Curves v Temperature
0.01
Source-Drain Diode Forward Voltage
0.1
1.4
1.2
1.0
0.8
0.6
0.1
10
10
1
-50
1
0.4
T = 150°C
0.1
-V
-V
T = 150°C
Tj Junction Temperature (°C)
Output Characteristics
DS
SD
0.6
0
Diodes Incorporated
Drain-Source Voltage (V)
Source-Drain Voltage (V)
A Product Line of
0.8
T = 25°C
1
50
V
I
D
1.0
GS
= - 1.4A
V
I
D
= -10V
GS
= -250uA
= V
10V
1.2
DS
100
ZXMC3AMC
10
R
V
DS(on)
1.4
4V
3V
GS(th)
5V
3.5V
2V
1.5V
-V
© Diodes Incorporated
GS
December 2010
150