ZXMC3AMCTA Diodes Zetex, ZXMC3AMCTA Datasheet - Page 9

• Manufacturer Part Number: ZXMC3AMCTA
• Description: MOSFET N+P 30V 2.9A/2.1A DFN
• Manufacturer: Diodes Zetex

Specifications of ZXMC3AMCTA

• Input Capacitance (ciss) @ Vds: 190pF @ 25V
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 2.1A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3.9nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMC3AMCTATR

Typical Electrical Characteristics – Q2 P-Channel - Continued
Test Circuits
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
Capacitance v Drain-Source Voltage
V
G
350
300
250
200
150
100
50
Q
GS
Basic gate charge waveform
Switching time waveforms
t
-V
r
C
t
(on)
RSS
DS
t
d(off)
- Drain - Source Voltage (V)
Q
Q
G
1
GD
C
OSS
Charge
C
ISS
t
r
t
(on)
V
f = 1MHz
t
GS
d(on)
10
= 0V
www.diodes.com
90%
10%
9 of 11
V
V
DS
GS
10
Gate-Source Voltage v Gate Charge
8
6
4
2
0
0
Switching time test circuit
I
D
Gate charge test circuit
= -1.4A
Pulse width
Duty factor 0.1%
1
12V
R
G
Diodes Incorporated
Q - Charge (nC)
0.2 F
2
A Product Line of
1 S
V
regulator
Current
GS
50k
3
I
G
V
GS
4
R
Same as
D.U.T
D
D.U.T
V
DS
V
5
= -15V
DS
ZXMC3AMC
I
© Diodes Incorporated
V
D
December 2010
6
DS
V
DD