SI6975DQ-T1-E3 Vishay, SI6975DQ-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI6975DQ-T1-E3
• Description: MOSFET P-CH DUAL G-S 12V 8TSSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI6975DQ-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 450mV @ 5mA
• Gate Charge (qg) @ Vgs: 30nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71319
S-81221-Rev. B, 02-Jun-08
0.10
0.08
0.06
0.04
0.02
0.00
30
10
1
5
4
3
2
1
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
V
DS
= 5.1 A
GS
On-Resistance vs. Drain Current
5
= 6 V
0.3
= 1.8 V
5
V
T
SD
J
= 150 °C
Q
- Source-to-Drain Voltage (V)
g
10
I
- Total Gate Charge (nC)
D
- Drain Current (A)
Gate Charge
0.6
10
15
0.9
V
V
15
GS
GS
T
20
J
= 2.5 V
= 4.5 V
= 25 °C
1.2
20
25
1.5
30
25
4000
3200
2400
1600
1.60
1.40
1.20
1.00
0.80
0.60
0.10
0.08
0.06
0.04
0.02
0.00
800
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
- 25
D
rss
GS
= 5.1 A
2
= 4.5 V
V
V
T
0
GS
I
2
DS
J
D
- Junction Temperature (°C)
C
= 5.1 A
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
C
oss
4
iss
25
Capacitance
50
4
Vishay Siliconix
6
75
Si6975DQ
8
www.vishay.com
100
6
10
125
150
12
8
3