SI6975DQ-T1 Vishay/Siliconix, SI6975DQ-T1 Datasheet
SI6975DQ-T1
Specifications of SI6975DQ-T1
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SI6975DQ-T1 Summary of contents
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... Si6975DQ Top View Ordering Information: Si6975DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...
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... Si6975DQ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71319 S-81221-Rev. B, 02-Jun °C J 0.9 1.2 1.5 Si6975DQ Vishay Siliconix 4000 C 3200 iss 2400 1600 C oss 800 C rss Drain-to-Source Voltage (V) DS Capacitance 1. 4 ...
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... Si6975DQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0 250 µA D 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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JEDEC Part Number: MO-153 R 0. Corners 0.10 (4 Corners) Document Number: 71201 06-Jul- oK1 ECN: S-03946—Rev. G, 09-Jul-01 L1 DWG: 5844 Package Information Vishay Siliconix Dim Min Nom Max A – – ...
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... Wharton McDaniel and David Oldham When Vishay Siliconix introduced its LITTLE FOOT MOSFETs, it was the first time that power MOSFETs had been offered in a true surface-mount package, the SOIC. LITTLE FOOT immediately found a home in new small form factor disk drives, computers, and cellular phones. ...
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... CONCLUSION TSSOP power MOSFETs provide a significant reduction in PC board footprint and package height, allowing reduction in board size and application where SOICs will not fit. This is accomplished using a standard IC package and a custom thermal resistance leadframe, combining small size with good power handling capability ...
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... Mounting LITTLE FOOT Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same ...
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RECOMMENDED MINIMUM PADS FOR TSSOP-8 Return to Index Return to Index Document Number: 72611 Revision: 21-Jan-08 0.092 (2.337) 0.026 (0.660) 0.014 0.012 (0.356) (0.305) Recommended Minimum Pads Dimensions in Inches/(mm) Application Note 826 Vishay Siliconix www.vishay.com 27 ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...