SI6975DQ-T1 Vishay/Siliconix, SI6975DQ-T1 Datasheet - Page 5

• Manufacturer Part Number: SI6975DQ-T1
• Description: MOSFET 12V 5.1A
• Manufacturer: Vishay/Siliconix

Specifications of SI6975DQ-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.3 A
• Resistance Drain-source Rds (on): 27 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Fall Time: 32 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 830 mW
• Rise Time: 32 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 96 ns

JEDEC Part Number: MO-153
Document Number: 71201
06-Jul-01
Corners)
R 0.10
B
D
e
(4 Corners)
R 0.10
C
E
L1
L
oK1
ECN: S-03946—Rev. G, 09-Jul-01
DWG: 5844
Package Information
Dim
oK1
A
A
E
L
A
B
C
D
E
Y
e
L
1
1
2
1
Min
0.05
0.80
0.19
2.90
6.20
4.30
0.45
0.90
0_
–
–
–
–
Vishay Siliconix
Nom
0.127
0.10
1.00
0.28
3.00
6.40
4.40
0.65
0.60
1.00
3_
–
–
www.vishay.com
Max
1.20
0.15
1.05
0.30
3.10
6.60
4.50
0.75
1.10
0.10
6_
–
–
1