SI4178DY-T1-E3 Vishay, SI4178DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4178DY-T1-E3
• Description: MOSFET N-CH 30V 12A SO8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4178DY-T1-E3

• Input Capacitance (ciss) @ Vds: 405pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Power - Max: 5W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4178DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
0.4
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
T
25
J
- Temperature (°C)
= 150 °C
I
0.6
D
= 250 μA
50
0.8
75
0.01
100
0.1
10
1.0
T
1
100
0.1
J
= 25 °C
* V
Safe Operating Area, Junction-to-Ambient
Single Pulse
T
Limited by R
1.2
125
GS
A
= 25 °C
> minimum V
V
DS
150
1.4
- Drain-to-Source Voltage (V)
DS(on)
1
GS
*
at which R
BVDSS Limited
10
DS(on)
0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
30
25
20
15
10
5
0
0.001
is specified
0
I
D
On-Resistance vs. Gate-to-Source Voltage
100 μs
1 ms
10 ms
100 ms
1 s
10 s
DC
= 8.4 A; T
0.01
I
D
100
2
= 2 A; T
V
GS
Single Pulse Power
J
- Gate-to-Source Voltage (V)
0.1
= 25 °C
J
= 25 °C
4
Time (s)
1
S10-0212-Rev. A, 25-Jan-10
Document Number: 65718
I
I
D
D
6
= 2 A; T
= 8.4 A; T
10
J
= 125 °C
8
100
J
= 125 °C
1000
10