SI4178DY-T1-E3 Vishay, SI4178DY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4178DY-T1-E3
• Description: MOSFET N-CH 30V 12A SO8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4178DY-T1-E3

• Input Capacitance (ciss) @ Vds: 405pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Power - Max: 5W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65718
S10-0212-Rev. A, 25-Jan-10
15
12
9
6
3
0
0
Package Limited
25
T
D
C
Current Derating*
50
is based on T
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
150
5
4
3
2
1
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
Si4178DY
www.vishay.com
125
150
5