MJD127 ON Semiconductor, MJD127 Datasheet

Darlington Transistors 8A 100V Bipolar

MJD127

Manufacturer Part Number
MJD127
Description
Darlington Transistors 8A 100V Bipolar
Manufacturer
ON Semiconductor
Datasheet

Specifications of MJD127

Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Package / Case
TO-252-3 (DPAK)
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
100 V
Maximum Dc Collector Current
8 A
Maximum Collector Cut-off Current
10 uA
Power Dissipation
20 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
8 A
Dc Collector/base Gain Hfe Min
100, 1000
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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MJD122 (NPN)
MJD127 (PNP)
Complementary Darlington
Power Transistor
DPAK For Surface Mount Applications
applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
© Semiconductor Components Industries, LLC, 2011
March, 2011 − Rev. 10
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Power Dissipation @ T
Total Power Dissipation (Note 1)
Operating and Storage Junction
Thermal Resistance
Thermal Resistance
Designed for general purpose amplifier and low speed switching
Lead Formed for Surface Mount Applications in Plastic Sleeves
Surface Mount Replacements for 2N6040−2N6045 Series,
TIP120−TIP122 Series, and TIP125−TIP127 Series
Monolithic Construction With Built−in Base−Emitter Shunt Resistors
High DC Current Gain: h
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Pb−Free Packages are Available
sizes recommended.
Derate above 25°C
@ T
Derate above 25°C
Temperature Range
Junction−to−Case
Junction−to−Ambient (Note1)
A
= 25°C
Characteristic
Rating
Machine Model, C u 400 V
− Continuous
− Peak
C
FE
= 25°C
= 2500 (Typ) @ I
Symbol
Symbol
T
V
R
J
R
V
V
P
P
CEO
, T
I
I
qJC
qJA
CB
EB
C
B
D
D
stg
C
−65 to +150
= 4.0 Adc
Value
0.014
0.16
1.75
Max
6.25
71.4
100
100
120
16
20
5
8
1
mAdc
W/°C
W/°C
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
°C
W
W
†For information on tape and reel specifications,
MJD122
MJD122G
MJD122T4
MJD122T4G
MJD127
MJD127G
MJD127T4
MJD127T4G
1 2
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device
3
100 VOLTS, 20 WATTS
POWER TRANSISTOR
ORDERING INFORMATION
A
Y
WW
x
G
4
BASE
http://onsemi.com
8 AMPERES
1
CASE 369C
(Pb−Free)
= Assembly Location
= Year
= Work Week
= 2 or 7
= Pb−Free Package
(Pb−Free)
(Pb−Free)
(Pb−Free)
COLLECTOR 2,4
Package
STYLE 1
SILICON
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
DPAK
EMITTER 3
Publication Order Number:
2500/Tape & Reel
2500/Tape & Reel
2500/Tape & Reel
2500/Tape & Reel
75 Units/Rail
75 Units/Rail
75 Units/Rail
75 Units/Rail
Shipping
MARKING
DIAGRAM
AYWW
J12xG
MJD122/D

Related parts for MJD127

MJD127 Summary of contents

Page 1

... MJD122 (NPN) MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Surface Mount Replacements for 2N6040−2N6045 Series, TIP120− ...

Page 2

... MHz Small−Signal Current Gain ( Adc Vdc kHz Pulse Test: Pulse Width v 300 ms, Duty Cycle 25_C unless otherwise noted) C MJD127 MJD122 SURFACE MOUNT 100 T, TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2 Symbol Min Max Unit V 100 − Vdc ...

Page 3

... TYPICAL ELECTRICAL CHARACTERISTICS PNP MJD127 20,000 10,000 7000 5000 T = 150°C J 3000 2000 25°C 1000 700 - 55°C 500 300 200 0.1 0.2 0.3 0.5 0 COLLECTOR CURRENT (AMP 2 2.2 1.8 1.4 1 0.3 0.5 0 BASE CURRENT (mA 25°C J 2 250 BE(sat 250 ...

Page 4

... TYPICAL ELECTRICAL CHARACTERISTICS PNP MJD127 + 5 ≤ FE 25°C to 150° for V VC CE(sat 55°C to 25°C 25°C to 150° for 0.1 0.2 0.3 0 COLLECTOR CURRENT (AMP REVERSE FORWARD 150° 100° 25° 0.6 + 0 0.2 - 0 BASE-EMITTER VOLTAGE (VOLTS) BE 10,000 ...

Page 5

R & R VARIED TO OBTAIN DESIRED CURRENT LEVELS MUST BE FAST RECOVERY TYPE, e.g.: 1 ≈ 100 mA 1N5825 USED ABOVE I B ≈ 100 mA MSD6100 USED BELOW ...

Page 6

COLLECTOR PNP BASE ≈ ≈ 120 EMITTER Figure 13. Darlington Schematic http://onsemi.com COLLECTOR NPN BASE ≈ ≈ 120 EMITTER 6 ...

Page 7

... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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