BZX79-C2V7,113 NXP Semiconductors, BZX79-C2V7,113 Datasheet - Page 2

• Manufacturer Part Number: BZX79-C2V7,113
• Description: DIODE ZENER 2.7V 500MW DO-35
• Manufacturer: NXP Semiconductors

Specifications of BZX79-C2V7,113

• Package / Case: DO-204AH, DO-35, Axial
• Voltage - Zener (nom) (vz): 2.7V
• Voltage - Forward (vf) (max) @ If: 900mV @ 10mA
• Current - Reverse Leakage @ Vr: 20µA @ 1V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (max) (zzt): 100 Ohm
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C
• Zener Voltage: 2.7 V
• Voltage Tolerance: 5 %
• Voltage Temperature Coefficient: - 2 mV / K
• Power Dissipation: 500 mW
• Maximum Reverse Leakage Current: 20 uA
• Maximum Zener Impedance: 100 Ohms
• Maximum Operating Temperature: + 200 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933298820113; BZX79-C2V7 T/R; BZX79-C2V7 T/R

NXP Semiconductors
FEATURES
• Total power dissipation: max. 500 mW
• Two tolerance series: ±2%, and approx. ±5%
• Working voltage range: nom. 2.4 to 75 V (E24 range)
• Non-repetitive peak reverse power dissipation:
APPLICATIONS
• Low voltage stabilizers or voltage references.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed
leaded glass SOD27 (DO-35) packages. The diodes are
available in the normalized E24 ±2% (BZX79-B) and
approx. ±5% (BZX79-C) tolerance range. The series
consists of 37 types with nominal working voltages from
2.4 to 75 V.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max.
2. Tie-point temperature ≤ 50 °C; max. lead length 8 mm.
ELECTRICAL CHARACTERISTICS
Total BZX79-B and BZX79-C series
T
2002 Feb 27
I
I
P
P
T
T
V
SYMBOL
SYMBOL
j
F
ZSM
max. 40 W.
stg
j
tot
ZSM
= 25 °C unless otherwise specified.
F
Voltage regulator diodes
continuous forward current
non-repetitive peak reverse current
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
forward voltage
PARAMETER
PARAMETER
t
T
T
T
t
T
p
p
j
amb
amb
j
= 100 μs; square wave;
= 100 μs; square wave;
= 25 °C prior to surge
= 25 °C prior to surge; see Fig.3
= 50 °C; note 1
= 50 °C; note 2
I
F
2
= 10 mA; see Fig.4
handbook, halfpage
CONDITIONS
The diodes are type branded.
Fig.1
CONDITIONS
Simplified outline (SOD27; DO-35) and
symbol.
k
−
see Tables 1 and 2 A
−
−
−
−65
−65
MIN.
BZX79 series
MAM239
Product data sheet
250
400
500
40
+200
+200
MAX.
MAX.
a
0.9
mA
mW
mW
W
°C
°C
UNIT
UNIT
V