BZX79-C2V7,113 NXP Semiconductors, BZX79-C2V7,113 Datasheet - Page 4

• Manufacturer Part Number: BZX79-C2V7,113
• Description: DIODE ZENER 2.7V 500MW DO-35
• Manufacturer: NXP Semiconductors

Specifications of BZX79-C2V7,113

• Package / Case: DO-204AH, DO-35, Axial
• Voltage - Zener (nom) (vz): 2.7V
• Voltage - Forward (vf) (max) @ If: 900mV @ 10mA
• Current - Reverse Leakage @ Vr: 20µA @ 1V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (max) (zzt): 100 Ohm
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C
• Zener Voltage: 2.7 V
• Voltage Tolerance: 5 %
• Voltage Temperature Coefficient: - 2 mV / K
• Power Dissipation: 500 mW
• Maximum Reverse Leakage Current: 20 uA
• Maximum Zener Impedance: 100 Ohms
• Maximum Operating Temperature: + 200 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933298820113; BZX79-C2V7 T/R; BZX79-C2V7 T/R

Table 1 Per type, BZX79-B/C2V4 to BZX79-B/C24
T
BZX79-
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
j
Bxxx
Cxxx
= 25 °C unless otherwise specified.
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.80
11.80
12.70
14.70
15.70
17.60
19.60
21.60
23.50
Tol. ±2% (B)
MIN.
WORKING VOLTAGE
at I
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.20
12.20
13.30
15.30
16.30
18.40
20.40
22.40
24.50
MAX.
Ztest
V
Z
(V)
= 5 mA
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
MIN.
Tol. approx.
±5% (C)
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
MAX.
275
300
325
350
375
400
410
425
400
80
40
30
30
40
40
50
50
50
50
50
50
50
60
60
60
at I
TYP.
DIFFERENTIAL RESISTANCE
Ztest
= 1 mA
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
MAX.
r
dif
(Ω)
at I
70
75
80
85
85
85
80
50
40
15
6
6
6
6
6
8
10
10
10
10
10
10
15
20
25
TYP.
Ztest
= 5 mA
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
MAX.
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
12.3
14.1
15.9
MIN.
(see Figs 5 and 6)
TEMP. COEFF.
at I
S
Ztest
Z
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
−0.8
1.2
2.3
3.0
4.0
4.6
5.5
6.4
7.4
8.4
9.4
11.4
12.4
14.4
15.6
17.6
19.6
TYP.
(mV/K)
= 5 mA
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
MAX.
DIODE CAP.
at f = 1 MHz;
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
85
85
80
75
75
70
60
60
55
V
C
R
MAX.
d
= 0 V
(pF)
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
at t
NON-REPETITIVE PEAK
REVERSE CURRENT
p
= 100 μs; T
I
ZSM
MAX.
(A)
amb
= 25 °C