BZT52H-C16,115 NXP Semiconductors, BZT52H-C16,115 Datasheet - Page 5

• Manufacturer Part Number: BZT52H-C16,115
• Description: DIODE ZENER 16V 375MW SOD123F
• Manufacturer: NXP Semiconductors

Specifications of BZT52H-C16,115

• Package / Case: SOD-123 Flat Leads
• Voltage - Zener (nom) (vz): 16V
• Voltage - Forward (vf) (max) @ If: 900mV @ 10mA
• Current - Reverse Leakage @ Vr: 50nA @ 11.2V
• Tolerance: ±5%
• Power - Max: 375mW
• Impedance (max) (zzt): 20 Ohm
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 150°C
• Zener Voltage: 16.2 V
• Voltage Tolerance: 6 %
• Voltage Temperature Coefficient: 12.2 mV / K
• Power Dissipation: 830 mW
• Maximum Reverse Leakage Current: 0.05 uA
• Maximum Zener Impedance: 20 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3757-2; 934059407115; BZT52H-C16 T/R

NXP Semiconductors
Table 8.
T
[1]
[2]
BZT52H_SER
Product data sheet
BZT52H
-xxx
9V1
10
11
12
13
15
16
18
20
22
24
j
= 25
f = 1 MHz; V
t
p
= 100 μs; T
°
C unless otherwise specified.
Sel
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
Characteristics per type; BZT52H-B2V4 to BZT52H-C24
R
amb
Working
voltage
V
I
Min
8.92
8.5
9.8
9.4
10.8
10.4
11.8
11.4
12.7
12.4
14.7
13.8
15.7
15.3
17.6
16.8
19.6
18.8
21.6
20.8
23.5
22.8
= 0 V.
Z
Z
= 5 mA
(V);
= 25 °C.
Max
9.28
9.6
10.2
10.6
11.2
11.6
12.2
12.7
13.3
14.1
15.3
15.6
16.3
17.1
18.4
19.1
20.4
21.2
22.4
23.3
24.5
25.6
Maximum differential
resistance r
I
100
70
70
90
110
110
170
170
220
220
220
Z
= 1 mA
All information provided in this document is subject to legal disclaimers.
dif
I
10
10
10
10
10
15
20
20
20
25
30
Z
= 5 mA
(Ω)
Rev. 3 — 7 December 2010
Reverse
current I
Max
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
8
10.5
12.6
14
15.4
16.8
V
6
7
8
8
11.2
R
R
(μA)
(V)
…continued
Single Zener diodes in a SOD123F package
Temperature
coefficient
S
I
Min
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
Z
Z
= 5 mA
(mV/K);
Max
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
BZT52H series
Diode
capacitance
C
Max
150
85
85
80
75
75
70
60
60
55
90
d
(pF)
[1]
© NXP B.V. 2010. All rights reserved.
Non-repetitive
peak reverse
current
I
Max
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
3.0
ZSM
(A)
[2]
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