BZT52H-C16,115 NXP Semiconductors, BZT52H-C16,115 Datasheet - Page 8

DIODE ZENER 16V 375MW SOD123F

BZT52H-C16,115

Manufacturer Part Number
BZT52H-C16,115
Description
DIODE ZENER 16V 375MW SOD123F
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BZT52H-C16,115

Package / Case
SOD-123 Flat Leads
Voltage - Zener (nom) (vz)
16V
Voltage - Forward (vf) (max) @ If
900mV @ 10mA
Current - Reverse Leakage @ Vr
50nA @ 11.2V
Tolerance
±5%
Power - Max
375mW
Impedance (max) (zzt)
20 Ohm
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C
Zener Voltage
16.2 V
Voltage Tolerance
6 %
Voltage Temperature Coefficient
12.2 mV / K
Power Dissipation
830 mW
Maximum Reverse Leakage Current
0.05 uA
Maximum Zener Impedance
20 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-3757-2
934059407115
BZT52H-C16 T/R
NXP Semiconductors
8. Test information
9. Package outline
10. Packing information
BZT52H_SER
Product data sheet
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Table 11.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
BZT52H-B2V4 to
BZT52H-C75
Fig 5.
For further information and the availability of packing methods, see
Package outline SOD123F
Packing methods
All information provided in this document is subject to legal disclaimers.
Package
SOD123F
Dimensions in mm
Rev. 3 — 7 December 2010
3.6
3.4
Description
4 mm pitch, 8 mm tape and reel
2.7
2.5
0.70
0.55
1.7
1.5
Single Zener diodes in a SOD123F package
1
2
0.55
0.35
BZT52H series
Section
1.2
1.0
0.25
0.10
[1]
04-11-29
14.
Packing quantity
3000
-115
© NXP B.V. 2010. All rights reserved.
10000
-135
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