BZV55-B47,115 NXP Semiconductors, BZV55-B47,115 Datasheet - Page 5

• Manufacturer Part Number: BZV55-B47,115
• Description: DIODE ZENER 47V 500MW SOD80C
• Manufacturer: NXP Semiconductors

Specifications of BZV55-B47,115

• Package / Case: LL-34, LLDS, MiniMELF, SOD80C
• Voltage - Zener (nom) (vz): 47V
• Voltage - Forward (vf) (max) @ If: 900mV @ 10mA
• Current - Reverse Leakage @ Vr: 50nA @ 32.9V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (max) (zzt): 170 Ohm
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 200°C
• Zener Voltage: 47 V
• Voltage Tolerance: 2 %
• Voltage Temperature Coefficient: 42.9 mV / K
• Power Dissipation: 500 mW
• Maximum Reverse Leakage Current: 0.05 uA
• Maximum Zener Impedance: 170 Ohms
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933931850115; BZV55-B47 T/R; BZV55-B47 T/R

NXP Semiconductors
Table 8.
T
[1]
[2]
BZV55_SER
Product data sheet
BZV55-
xxx
13
15
16
18
20
22
24
j
= 25
f = 1 MHz; V
t
p
= 100 s; square wave; T

C unless otherwise specified.
Sel
B
C
B
C
B
C
B
C
B
C
B
C
B
C
Characteristics per type; BZV55-B2V4 to BZV55-C24
R
= 0 V
Working
voltage
V
I
Min
12.7
12.4
14.7
13.8
15.7
15.3
17.6
16.8
19.6
18.8
21.6
20.8
23.5
22.8
Z
Z
= 5 mA
(V)
Max
13.3
14.1
15.3
15.6
16.3
17.1
18.4
19.1
20.4
21.2
22.4
23.3
24.5
25.6
j
= 25 C prior to surge
50
50
60
60
60
Differential resistance
r
I
Typ
50
50
Z
dif
= 1 mA
()
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200
200
225
225
250
250
Max
170
Rev. 5 — 26 January 2011
20
25
I
Typ
10
10
10
10
15
Z
= 5 mA
55
70
Max
30
30
40
45
55
14.1
15.9
Temperature
coefficient
S
I
Min
7.0
9.2
10.4
12.4
12.3
Z
Z
= 5 mA
…continued
(mV/K)
Typ
9.4
11.4
12.4
14.4
15.6
17.6
19.6
Max
11.0
13.0
14.0
16.0
18.0
20.0
22.0
Diode
capacitance
C
Max
80
75
75
70
60
60
55
d
BZV55 series
(pF)
Voltage regulator diodes
[1]
© NXP B.V. 2011. All rights reserved.
Non-repetitive
peak reverse
current
I
Max
2.5
2.0
1.5
1.5
1.5
1.25
1.25
ZSM
(A)
[2]
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