BZV55-B47,115 NXP Semiconductors, BZV55-B47,115 Datasheet - Page 7

• Manufacturer Part Number: BZV55-B47,115
• Description: DIODE ZENER 47V 500MW SOD80C
• Manufacturer: NXP Semiconductors

Specifications of BZV55-B47,115

• Package / Case: LL-34, LLDS, MiniMELF, SOD80C
• Voltage - Zener (nom) (vz): 47V
• Voltage - Forward (vf) (max) @ If: 900mV @ 10mA
• Current - Reverse Leakage @ Vr: 50nA @ 32.9V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (max) (zzt): 170 Ohm
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 200°C
• Zener Voltage: 47 V
• Voltage Tolerance: 2 %
• Voltage Temperature Coefficient: 42.9 mV / K
• Power Dissipation: 500 mW
• Maximum Reverse Leakage Current: 0.05 uA
• Maximum Zener Impedance: 170 Ohms
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933931850115; BZV55-B47 T/R; BZV55-B47 T/R

NXP Semiconductors
BZV55_SER
Product data sheet
Fig 2.
Fig 4.
(mV/K)
P
S
(W)
ZSM
(1) T
(2) T
Z
10
10
10
−1
−2
−3
0
1
10
3
2
as a function of pulse duration; maximum
values
BZV55-B/C2V4 to BZV55-B/C4V3
T
Temperature coefficient as a function of
working current; typical values
Non-repetitive peak reverse power dissipation
0
−1
j
j
j
= 25 C (prior to surge)
= 150 C (prior to surge)
= 25 C to 150 C
20
1
(1)
(2)
4V3
40
t
p
3V9
2V4
2V7
(ms)
3V3
I
3V6
Z
All information provided in this document is subject to legal disclaimers.
(mA)
mbg801
mbg783
3V0
Rev. 5 — 26 January 2011
10
60
Fig 3.
Fig 5.
(mV/K)
(mA)
S
I
F
Z
300
200
100
10
−5
0
5
0
0.6
T
Forward current as a function of forward
voltage; typical values
0
BZV55-B/C4V7 to BZV55-B/C12
T
Temperature coefficient as a function of
working current; typical values
j
j
= 25 C
= 25 C to 150 C
4
8
9V1
8V2
7V5
6V8
0.8
12
11
10
BZV55 series
Voltage regulator diodes
12
6V2
5V6
5V1
4V7
© NXP B.V. 2011. All rights reserved.
16
I
V
Z
mbg781
mbg782
F
(mA)
(V)
20
1
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