CY7C1049DV33-10ZSXIT Cypress Semiconductor Corp, CY7C1049DV33-10ZSXIT Datasheet - Page 6
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CY7C1049DV33-10ZSXIT
Manufacturer Part Number
CY7C1049DV33-10ZSXIT
Description
CY7C1049DV33-10ZSXIT
Manufacturer
Cypress Semiconductor Corp
Specifications of CY7C1049DV33-10ZSXIT
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
4M (512K x 8)
Speed
10ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TSOP II
Memory Configuration
512K X 8
Access Time
10ns
Supply Voltage Range
3V To 3.6V
Memory Case Style
TSOP
No. Of Pins
44
Operating Temperature Range
-40°C To +85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1049DV33-10ZSXIT
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Switching Waveforms
Notes
Document Number: 38-05475 Rev. *F
13. Device is continuously selected. OE, CE = V
14. WE is HIGH for read cycle.
15. Address valid prior to or coincident with CE transition LOW.
16. Data IO is high impedance if OE = V
17. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.
DATA OUT
ADDRESS
ADDRESS
CURRENT
DATA I/O
DATA OUT
ADDRESS
SUPPLY
CE
WE
CE
V
OE
OE
CC
NOTE 17
PREVIOUS DATA VALID
HIGH IMPEDANCE
Figure 5. Write Cycle No. 1 (WE Controlled, OE HIGH During Write)
t
PU
IH
.
t
LZCE
t
SA
t
HZOE
IL
t
t
.
LZOE
ACE
Figure 4. Read Cycle No. 2 (OE Controlled)
50%
t
t
OHA
DOE
Figure 3. Read Cycle No. 1
t
t
AA
AW
t
t
RC
SCE
t
WC
t
RC
DATA
t
t
PWE
SD
IN
[13, 14]
DATA VALID
VALID
[14, 15]
t
HZOE
t
HA
DATA VALID
[16, 17]
t
HD
t
HZCE
CY7C1049DV33
t
PD
50%
IMPEDANCE
HIGH
Page 6 of 11
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I
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