ADF4360-8BCPRL Analog Devices Inc, ADF4360-8BCPRL Datasheet - Page 6

• Manufacturer Part Number: ADF4360-8BCPRL
• Description: IC,FREQUENCY SYNTHESIZER,BICMOS,LLCC,24PIN,PLASTIC
• Manufacturer: Analog Devices Inc
• Type: Fanout Distribution, Integer N Synthesizer (RF)r

Specifications of ADF4360-8BCPRL

• Pll: Yes
• Input: CMOS
• Output: Clock
• Number Of Circuits: 1
• Ratio - Input:output: 1:2
• Differential - Input:output: No/No
• Frequency - Max: 400MHz
• Divider/multiplier: Yes/No
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 24-LFCSP
• Frequency-max: 400MHz
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• For Use With: EVAL-ADF4360-8EBZ1 - BOARD EVALUATION FOR ADF4360-8
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

ADF4360-8
ABSOLUTE MAXIMUM RATINGS
T
Table 3.
Parameter
AV
AV
V
V
Digital I/O Voltage to GND
Analog I/O Voltage to GND
REF
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
CSP θ
Lead Temperature, Soldering
1
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate
on the human body and test equipment and can discharge without detection. Although this product
features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to
high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid
performance degradation or loss of functionality.
GND = AGND = DGND = 0 V.
VCO
VCO
A
Paddle Soldered
Paddle Not Soldered
Vapor Phase (60 sec)
Infrared (15 sec)
DD
DD
= 25°C, unless otherwise noted.
IN
to GND
to AV
to GND
to DV
to GND
JA
Thermal Impedance
DD
DD
1
Rating
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to V
−0.3 V to V
−0.3 V to V
−40°C to + 85°C
−65°C to +150°C
150°C
50°C/W
88°C/W
215°C
220°C
DD
DD
DD
+ 0.3 V
+ 0.3 V
+ 0.3 V
Rev. A | Page 6 of 24
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <1 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
12543 (CMOS) and 700 (Bipolar)