AMP02FSZ-RL Analog Devices Inc, AMP02FSZ-RL Datasheet - Page 4

• Manufacturer Part Number: AMP02FSZ-RL
• Description: SOL-16 WITH TAPE & REEL
• Manufacturer: Analog Devices Inc
• Type: Instrumentation Ampr

Specifications of AMP02FSZ-RL

• Amplifier Type: Instrumentation
• Number Of Circuits: 1
• Slew Rate: 6 V/µs
• -3db Bandwidth: 1.2MHz
• Current - Input Bias: 4nA
• Voltage - Input Offset: 40µV
• Current - Supply: 5mA
• Current - Output / Channel: 32mA
• Voltage - Supply, Single/dual (±): ±4.5 V ~ 18 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.300", 7.5mm Width)
• Number Of Channels: 1
• Number Of Elements: 1
• Power Supply Requirement: Dual
• Common Mode Rejection Ratio: 75dB
• Voltage Gain Db: 80dB
• Input Resistance: 16500@±15VMohm
• Input Offset Voltage: 0.2@±15VmV
• Input Bias Current: 0.02@±15VnA
• Single Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (typ): ±5/±9/±12/±15V
• Power Supply Rejection Ratio: 75dB
• Rail/rail I/o Type: No
• Single Supply Voltage (min): Not RequiredV
• Single Supply Voltage (max): Not RequiredV
• Dual Supply Voltage (min): ±4.5V
• Dual Supply Voltage (max): ±18V
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 16
• Package Type: SOIC W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Output Type: -
• Gain Bandwidth Product: -
• Lead Free Status / Rohs Status: Compliant

AMP02
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AMP02 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
Parameter
Input Offset Voltage
Output Offset Voltage
Power Supply
Rejection
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode
Rejection
Gain Equation Accuracy
Output Voltage Swing
Supply Current
*Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not
WAFER TEST LIMITS*
guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
(@ V
1
Symbol
V
V
PSR
I
I
IVR
CMR
V
I
DIE SIZE 0.103 inch
8
B
OS
SY
S
NOTE: PINS 1 and 8 are KELVIN CONNECTED
IOS
OOS
OUT
=
(2.62 mm
15 V, V
CM
2.95 mm, 7.73 sq. mm)
= 0 V, T
0.116 inch, 11,948 sq. mils
G = 10
Guaranteed by CMR Tests
G = 100
G = 10
Conditions
V
G = 1000
G = 100
G = 1
V
G = 1000
G = 1
R
G =
Die Characteristics
S
CM
L
= ± 4.8 V to ± 18 V
= 1 kΩ
50 kΩ
A
= ± 11 V
R
= 25 C, unless otherwise noted.)
G
–4–
+ 1, G = 1000
1. RG
2. –IN
3. +IN
4. V–
5. REFERENCE
6. OUT
7. V+
8. RG
9. SENSE
CONNECT SUBSTRATE TO V–
1
2
AMP02 GBC
200
8
110
110
95
75
20
10
± 11
110
110
95
75
0.7
± 12
6
Limits
Unit
µV max
mV max
dB
nA max
nA max
V min
dB
% max
V min
mA max
REV. E