CY7C057V-12BBC Cypress Semiconductor Corp, CY7C057V-12BBC Datasheet - Page 10

• Manufacturer Part Number: CY7C057V-12BBC
• Description: IC,SRAM,32KX36,CMOS,BGA,172PIN,PLASTIC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C057V-12BBC

• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Asynchronous
• Memory Size: 1.152M (32K x 36)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 172-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Switching Characteristics
Document #: 38-06055 Rev. *E
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Notes
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
LZBE
HZBE
PU
PD
ABE
WC
SCE
AW
HA
SA
PWE
SD
HD
HZWE
LZWE
WDD
DDD
BLA
BHA
BLC
13. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V, and output loading of the specified I
14. CE is LOW when CE
15. To access RAM, CE = L and SEM = H. To access semaphore, CE = H and SEM = L. Either condition must be valid for the entire t
16. At any given temperature and voltage condition for any given device, t
17. Test conditions used are Load 2.
18. This parameter is guaranteed by design, but it is not production tested. For information on port-to-port delay through RAM cells from writing port to reading port, refer
19. For information on port-to-port delay through RAM cells from writing port to reading port, refer to Read Timing with Busy waveform.
20. Test conditions used are Load 1.
Read Cycle
Write Cycle
Busy Timing
[14, 18]
[14, 18]
[15]
Parameter
and 10-pF load capacitance.
to Read Timing with Busy waveform.
[15]
[14, 15]
[14, 15]
[19]
[19]
[14, 13, 17, 18]
[14, 16, 17, 18]
[14, 16, 17, 18]
[14, 16, 17, 18]
[17, 18]
[17, 18]
[20]
Read cycle time
Address to data valid
Output hold from address change
CE LOW to data valid
OE LOW to data valid
OE Low to low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
Byte Enable to Low Z
Byte Enable to High Z
CE LOW to power-up
CE HIGH to power-down
Byte Enable access time
Write cycle time
CE LOW to write end
Address valid to write end
Address hold from write end
Address set-up to write start
Write pulse width
Data set-up to write end
Data hold from write end
R/W LOW to High Z
R/W HIGH to Low Z
Write pulse to data delay
Write data valid to read data valid
BUSY LOW from address match
BUSY HIGH from address mismatch
BUSY LOW from CE LOW
0
 V
IL
and CE
1
V
Description
IH
Over the Operating Range
HZCE
is less than t
[13]
Min
12
12
10
10
10
10
–
3
–
–
–
3
–
–
0
–
–
0
0
0
–
3
–
–
–
–
–
0
3
LZCE
-12
and t
Max
HZOE
12
12
10
10
10
12
12
10
25
20
12
12
12
–
–
8
–
–
–
–
–
–
–
–
–
–
–
–
–
CY7C056V
CY7C057V
is less than t
Min
15
15
12
12
12
10
LZOE
–
3
–
–
0
–
3
–
3
–
0
–
–
0
0
0
–
3
–
–
–
–
–
.
-15
SCE
Max
15
15
10
10
10
10
15
15
25
15
15
15
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
time.
CY7C056V
CY7C057V
Page 10 of 26
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
OI
/I
OH
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