CY7C1021CV26-15ZSXET Cypress Semiconductor Corp, CY7C1021CV26-15ZSXET Datasheet - Page 8

CY7C1021CV26-15ZSXET

CY7C1021CV26-15ZSXET

Manufacturer Part Number
CY7C1021CV26-15ZSXET
Description
CY7C1021CV26-15ZSXET
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1021CV26-15ZSXET

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
1M (64K x 16)
Speed
15ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 2.7 V
Operating Temperature
-40°C ~ 125°C
Package / Case
44-TSOP II
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Switching Waveforms
Document Number: 38-05589 Rev. *E
Write Cycle No. 1 (CE Controlled)
Write Cycle No. 2 (BLE or BHE Controlled)
Notes
ADDRESS
16. Data I/O is high-impedance if OE or BHE and/or BLE= V
17. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
BHE, BLE
DATA I/O
ADDRESS
BHE, BLE
DATA I/O
WE
CE
WE
CE
(continued)
t
SA
t
SA
[16, 17]
IH
.
t
AW
t
AW
t
WC
t
WC
t
t
BW
t
PWE
t
SCE
SCE
t
PWE
t
BW
t
SD
t
SD
t
HD
t
HD
t
HA
t
HA
CY7C1021CV26
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