CY7C1315BV18-250BZXC Cypress Semiconductor Corp, CY7C1315BV18-250BZXC Datasheet - Page 18

• Manufacturer Part Number: CY7C1315BV18-250BZXC
• Description: SRAM (Static RAM)
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1315BV18-250BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 18M (512K x 36)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TAP AC Switching Characteristics
Over the Operating Range
TAP Timing and Test Conditions
Figure 2
Notes
Document Number: 38-05620 Rev. *F
t
t
t
t
Setup Times
t
t
t
Hold Times
t
t
t
Output Times
t
t
15. t
16. Test conditions are specified using the load in TAP AC Test Conditions. t
TCYC
TF
TH
TL
TMSS
TDIS
CS
TMSH
TDIH
CH
TDOV
TDOX
Parameter
CS
and t
shows the TAP timing and test conditions.
CH
refer to the setup and hold time requirements of latching data from the boundary scan register.
TCK Clock Cycle Time
TCK Clock Frequency
TCK Clock HIGH
TCK Clock LOW
TMS Setup to TCK Clock Rise
TDI Setup to TCK Clock Rise
Capture Setup to TCK Rise
TMS Hold after TCK Clock Rise
TDI Hold after Clock Rise
Capture Hold after Clock Rise
TCK Clock LOW to TDO Valid
TCK Clock LOW to TDO Invalid
TDO
Test Mode Select
TMS
Test Clock
TCK
Test Data In
TDI
Test Data Out
TDO
[15, 16]
Z
0
= 50
(a)
GND
0.9V
Figure 2. TAP Timing and Test Conditions
C
50
L
= 20 pF
Description
[16]
t
TMSS
t
TDIS
R
/t
F
= 1 ns.
t
t
TDOV
TH
0V
t
t
TL
TMSH
t
CY7C1313BV18, CY7C1315BV18
TDIH
CY7C1311BV18, CY7C1911BV18
1.8V
t
ALL INPUT PULSES
TDOX
0.9V
t
TCYC
Min
50
20
20
5
5
5
5
5
5
0
Max
20
10
Page 18 of 32
MHz
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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